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Activation Uniformity Dependence of Undoped Semi-Insulating GaAs on Post-Implant Annealing Conditions

Published online by Cambridge University Press:  26 February 2011

C. Lanzieri ,
R. Graffitti  and
A. Cetronio
C. Lanzieri
Affiliation:
Selenia Industrie Elettroniche Associate S.p.A., Direzione Ricerche, Via Tiburtina, 00131 Roma, Italy.
R. Graffitti
Affiliation:
Selenia Industrie Elettroniche Associate S.p.A., Direzione Ricerche, Via Tiburtina, 00131 Roma, Italy.
A. Cetronio
Affiliation:
Selenia Industrie Elettroniche Associate S.p.A., Direzione Ricerche, Via Tiburtina, 00131 Roma, Italy.
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Abstract

In this article we will illustrate how by suitable furnace design, the radial thermal gradients generated on a GaAs substrate during the post-implant annealing cycle can be virtually eliminated, and how such a technique can result in appreciable improvement in on-wafer activation uniformity (standard deviation better than ± 2%), with virtually constant activation efficiency in going from seed to tail end wafer of a given ingot.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 373
Copyright
Copyright © Materials Research Society 1989

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References

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