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The Adsorption and Decomposition of Gallane Adducts on GaAs (100)

Published online by Cambridge University Press:  22 February 2011

J. S. Foord ,
A.T.S. Wee ,
N. K. Singh ,
T. J. Whitaker  and
D. O'Hare
J. S. Foord*
Affiliation:
University of Oxford, Physical and Inorganic Chemistry Laboratories, South Parks Road, Oxford 0X1 3QZ, United Kingdom.
A.T.S. Wee
Affiliation:
University of Oxford, Physical and Inorganic Chemistry Laboratories, South Parks Road, Oxford 0X1 3QZ, United Kingdom.
N. K. Singh
Affiliation:
University of Oxford, Physical and Inorganic Chemistry Laboratories, South Parks Road, Oxford 0X1 3QZ, United Kingdom.
T. J. Whitaker
Affiliation:
University of Oxford, Physical and Inorganic Chemistry Laboratories, South Parks Road, Oxford 0X1 3QZ, United Kingdom.
D. O'Hare
Affiliation:
University of Oxford, Physical and Inorganic Chemistry Laboratories, South Parks Road, Oxford 0X1 3QZ, United Kingdom.
*
* corresponding author.
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Abstract

The adsorption and decomposition of GaH3NMe3 and GaH3PMe3 on GaAs (100) has been investigated using XPS, TDS and molecular beam techniques. Both precursors react in a similar way with the adsorbed layer formed at low temperatures decomposing as the temperature is raised to produce metallic Ga, gaseous gallium hydride(s) and adsorbed hydrogen and the Lewis base, which also undergo desorption. Molecular beam measurements show that both compounds exhibit similar decomposition kinetics and decompose more readily than the aluminium analogues. The results indicate that the site-blocking effects, which prevent the low temperature decomposition of alane adducts, are less significant for the gallane compounds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 27
Copyright
Copyright © Materials Research Society 1993

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References

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