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Amorphization Threshold in Si-Implanted Strained Sige Alloy Layers

Published online by Cambridge University Press:  16 February 2011

T.W. Simpson ,
D. Love ,
D. Endisch ,
R.D. Goldberg ,
I.V. Mitchell ,
T.E. Haynes  and
J.-M. Baribeau
T.W. Simpson
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario, N6A 3K7, Canada
D. Love
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario, N6A 3K7, Canada
D. Endisch
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario, N6A 3K7, Canada
R.D. Goldberg
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario, N6A 3K7, Canada
I.V. Mitchell
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario, N6A 3K7, Canada
T.E. Haynes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
J.-M. Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, KIA 0R6, Canada
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Abstract

We have examined the damage produced by Si-ion implantation into strained Si1-xGex epilayers. Damage accumulation in the implanted layers was monitored in situ by time-resolved reflectivity and measured by ion channelling techniques to determine the amorphization threshold in strained Si1-xGex, (x = 0.16 and 0.29) over the temperature range 30-110°C. The results are compared with previously reported measurements on unstrained Si1-xGex, and with the simple model used to describe those results. We report here data which lend support to this model and which indicate that pre-existing strain does not enhance damage accumulation in the alloy layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 373: Symposium Y – Microstructure of Irradiated Materials , 1994 , 511
Copyright
Copyright © Materials Research Society 1995

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References

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