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Amorphous-Silicon TFTs with Self-Aligned Poly-Silicon Source and Drain

Published online by Cambridge University Press:  01 January 1993

Chang-Dong Kim ,
Osamu Sugiura  and
Masakiyo Matsumura
Chang-Dong Kim
Affiliation:
Dept. of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama Meguro-ku, Tokyo, 152, JAPAN
Osamu Sugiura
Affiliation:
Dept. of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama Meguro-ku, Tokyo, 152, JAPAN
Masakiyo Matsumura
Affiliation:
Dept. of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama Meguro-ku, Tokyo, 152, JAPAN
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Abstract

A new self-aligned a-Si TFT has been proposed. The TFT has the highly conductive n+ poly-Si source and drain with self-aligned manner. The key process technique employed to this TFT is of excimer-laser selective recrystallization. Two ways have been successfully demonstrated to acheive the selectivity of recrystallization. The fabricated TFT had the field- effect mobility of 0.8cm2/Vs and high on/off current-ratio more than 107.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 925
Copyright
Copyright © Materials Research Society 1993

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References

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