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An Anodic Process for the Determination of Grain Boundary and Film Thickness Strengthening Effects in Aluminum Films on Oxidized Silicon.

Published online by Cambridge University Press:  22 February 2011

Ramnath Venkatraman  and
John C. Bravman
Ramnath Venkatraman
Affiliation:
Dcpt. of Materials Science and Engineering, Stanford University, CA 94305
John C. Bravman
Affiliation:
Dcpt. of Materials Science and Engineering, Stanford University, CA 94305
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Abstract

We have measured stress variations with temperature as a function of film thickness and a given grain size in pure Al and AI-0.5%Cu films on Si substrates. The variation in thickness for a given grain size is brought about by using the same film and the repeated controlled growth and dissolution of a barrier anodic oxide which can be grown uniformly on the film. Stress measurements were made as a function of temperature by measuring wafer curvature after successively removing each 0. Iμm of Al film. The components of strengthening due to the film thickness and the presence of grain boundaries were separated by assuming that the flow stress of the film is simply the sum of these two components. The observations are consistent with results obtained using lascr-rcflowed films in an earlier work. The variations of these two components with temperature, and under tension and compression is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 127
Copyright
Copyright © Materials Research Society 1992

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References

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