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An Epitaxial Si/insulator/Si Structure Prepared by Vacuum Deposition of CaF2 and Silicon

Published online by Cambridge University Press:  15 February 2011

T. Asano  and
H. Ishiwara
T. Asano
Affiliation:
Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227 (Japan)
H. Ishiwara
Affiliation:
Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227 (Japan)
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Extract

Heteroepitaxial CaF2/Si and Si/CaF2/Si structures were prepared by conventional vacuum evaporation of CaF2 and silicon onto silicon substrates. The optimum conditions for obtaining good epitaxial films were investigated by changing the silicon substrate orientation, the film thickness and the substrate temperature during film deposition. From Rutherford backscattering and channelling spectroscopy it was found that CaF2 films with excellent film quality were obtained on Si(111), Si(110) and Si(100) substrates at substrate temperatures of 600– 800°C, 800°C and 500–600°C respectively. It was also found from Rutherford backscattering and channelling spectroscopy and from transmission electron microscopy that single-crystal silicon films are formed on a CaF2/Si(111) structure at a substrate temperature of 700°C. From measurements of the electrical properties of the top silicon film after the implantation of phosphorus ions at 2 ×1015 cm−2 and subsequent annealing at 750°C, an electron Hall mobility of 69cm2 V−1 s−1 was obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 10: Symposium C – Thin Films and Interfaces I , 1981 , 145
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1 Gibbons, J. F., Lee, K. F., Magee, T. J., Peng, J. C. and Ormond, R., Appl. Phys. Lett., 34 (1979) 831.Google Scholar
2 Geis, M. W., Flanders, D. C. and Smith, H. I., Appl. Phys. Lett., 35 (1979) 71.Google Scholar
3 Tamura, M., Tamura, H., Miyao, M. and Tokuyama, T., Proc. 12thConf. on Solid State Devices, Tokyo, 1980, inGoogle Scholar
3a Jpn. J. Appl. Phys., Suppl. 1, 20 (1981) p. 43.Google Scholar
4 Sakurai, J., Kawamura, S., Mori, H. and Nakano, M., Jpn. J. Appl. Phys., 20 (1981) L 176.Google Scholar
5 Gibbons, J. F., in Gibbons, J. F., Hess, L. D. and Sigmon, T. W. (eds.), Laser and Electron-Beam Solid Interactions and Material Processing, North-Holland, New York, 1981, p. 449.Google Scholar
6 Tsaur, B.-Y., Fan, J. C. C., Geis, M. W., Silversmith, D. J. and Mountain, R. W., Appl. Phys. Lett., 39 (1981) 561.Google Scholar
7 Saitoh, S., Ishiwara, H. and Furukawa, S., Appl. Phys. Lett., 37 (1980) 203.Google Scholar
8 Bean, J. C. and Poate, J. M., Appl. Phys. Lett., 37 (1980) 643.CrossRefGoogle Scholar
9 Saitoh, S., Ishiwara, H. and Furukawa, S., Proc. 12thConf. on Solid State Devices, Tokyo, 1980, inGoogle Scholar
9a Jpn. J. Appl. Phys., Suppl. 1, 20 (1981) 49.Google Scholar
10 Washburn, E. W. (ed.), International Critical Tables, McGraw-Hill, New York, 1933.Google Scholar
11 Rao, K. V. and Smakula, A., J. Appl. Phys., 37 (1966) 319.Google Scholar