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Anion Exchange Reactions and initial Gan Epitaxial Layer Formation Under Nitrogen Plasma Exposure of a GaAs Surface

Published online by Cambridge University Press:  21 February 2011

R. J. Hauenstein ,
D. A. Collins ,
M. L. O‘steen ,
Z. Z. Bandic  and
T. C. Mcgill
R. J. Hauenstein
Affiliation:
Oklahoma State University, Dept. of Physics, PS-145, Stillwater, OK 74078
D. A. Collins
Affiliation:
California institute of Technology, Dept. of applied Physics, 128-95, Pasadena, CA 91125
M. L. O‘steen
Affiliation:
Oklahoma State University, Dept. of Physics, PS-145, Stillwater, OK 74078
Z. Z. Bandic
Affiliation:
California institute of Technology, Dept. of applied Physics, 128-95, Pasadena, CA 91125
T. C. Mcgill
Affiliation:
Oklahoma State University, Dept. of Physics, PS-145, Stillwater, OK 74078
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Abstract

Initial nitridation of molecular beam epitaxially (MBE) grown GaAs surfaces by means of an electron cyclotron resonance (ECR) microwave plasma source is investigated in situ through time-resolved reflection high energy electron diffraction (RHEED), and ex situ high-resolution X-ray diffraction (HRXRD) techniques. Brief (< 8-10 s) plasma exposure of GaAs (100) surfaces results in surface N-for-As anion exchange and a new, specular, commensurate (3x3) RHEED pattern which appears to correspond to up to 1 monolayer of coherently strained GaN on GaAs. anion exchange kinetics is studied through the time-dependence of the onset and decay of the (3x3) RHEED pattern as a function of substrate temperature. For the first time, coherently strained GaNyAs1_y /GaAs heterostructures are grown and characterized. Direct evidence for thermally activated processes from both RHEED and HRXRD observations is presented, and N desorption and surface-segregation phenomena are proposed to explain the experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 259
Copyright
Copyright © Materials Research Society 1995

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