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Another Step in Developing a Single Wafer Integrated Process: Rapid Thermal Low Pressure Metalorganic Chemical Vapor Deposition of Local Diffused W(Zn) Contacts

Published online by Cambridge University Press:  22 February 2011

A. Katz ,
A. Feingold ,
A. El-Roy ,
N. Moriya ,
S. J. Pearton ,
A. Rusby ,
J. Kovalchick ,
C. R. Abernathy ,
M. Geva  and
E. Lane
A. Katz
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
A. Feingold
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
A. El-Roy
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
N. Moriya
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
A. Rusby
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. Kovalchick
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
C. R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
M. Geva
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
E. Lane
Affiliation:
AT&T Bell Laboratories, Breinigsville, Pennsylvania 18031
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Abstract

A selective deposition of W(Zn) metallization, for formation of diffused ohmic contacts onto InP-based material was realized by means of rapid thermal, low pressure metalorganic chemical vapor deposition (RT-LPMOCVD). The W(Zn) layers were deposited using a reactive gas mixture that contained diethylzinc (DEZn), WF6, H2 and Ar, at temperatures of 450 to 550°C and pressures in the range of 1–5 torr. Uniform andcontinuous layers of W(Zn), 30 to 120 nm thick, were obtained. These layers contained Zn at concentrations higher than 1×l018 cm−3, which was subsequentially in-diffused into the underlying semiconductor layer to form highly doped semiconductor layers as thick as 0.2μm. As a result, the specific contact resistance of the W(Zn)/ In0.53Ga0.47 As contact was reduced to minimum value of 5×l0−6 Ω·cm2. The W(Zn) film were found to be mechanically stable with a small compressive stress of 5.10−8 dyne. cm−2, and dry etch rates of up to 90 nmmin.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 217
Copyright
Copyright © Materials Research Society 1993

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References

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