Hostname: page-component-848d4c4894-x24gv Total loading time: 0 Render date: 2024-05-16T02:44:10.468Z Has data issue: false hasContentIssue false
  • English
  • Français

Auger Ionization of Silicon Nanocrystals

Published online by Cambridge University Press:  15 February 2011

B. Averboukh ,
D. Kovalev ,
M. Ben Chorin ,
F. Koch ,
Al.L. Efros  and
M. Rosen
B. Averboukh
Affiliation:
Technische Universität München, Physik Department E16, Garching 85748, Germany
D. Kovalev
Affiliation:
Technische Universität München, Physik Department E16, Garching 85748, Germany
M. Ben Chorin
Affiliation:
Technische Universität München, Physik Department E16, Garching 85748, Germany
F. Koch
Affiliation:
Technische Universität München, Physik Department E16, Garching 85748, Germany
Al.L. Efros
Affiliation:
Nanostructure Optics Section, Naval Research Laboratory, Washington, DC, 20375 USA
M. Rosen
Affiliation:
Nanostructure Optics Section, Naval Research Laboratory, Washington, DC, 20375 USA
Get access

Abstract

Photoluminescence saturation under intense CW optical excitation and optical degradation of photoluminescence from porous Si are studied. The anisotropy of the luminescence is observed under intense linearly polarized illumination at room temperature and after polarized light induced degradation at low temperature. The Auger process is shown to be responsible for these observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 559
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Mihalcescu, I., Vial, J.C., Bsiesy, A., Muller, F., Romenstain, R., Martin, E., Delenie, C., Lannoo, M. and Allan, G.. Phys. Rev., B51, p. 17605 (1995)Google Scholar
2.Kovalev, D., Averboukh, B., Ben Chorin, M., Koch, F., Efros, Al.L. and Rosen, M.. Phys. Rev. Lett. 77, p. 2089 (1996)Google Scholar
3.Andrianov, A.V., Kovalev, D.I., Zinov'ev, N.N. and Yaroshetskii, I.D.. JETP Lett., 58, p. 427 (1993)Google Scholar
4.Koyama, H. and Koshida, N.. Phys. Rev. B52, p. 2649 (1995)Google Scholar
5.Grivickas, V., Kolenda, J., Bernussi, A., Matvienko, B. and Basmaji, P.. Brazilian J. Phys. 24, p. 349 (1993)Google Scholar
6.Grivickas, V., Linnros, J. and Tellefsen, J.A.. Thin Solid Films, 255, p. 208 (1995)Google Scholar
7.Chepic, D.I., Efros, Al.L., Ekimov, A.I., Ivanov, M.G., Kharchenko, V.A., Kudriavtsev, I.A. and Yazeva, T.V.. J. Lumin. 47, p. 113 (1990)Google Scholar
8.Koos, M., Pocsik, I. and Vazsonyi, E.. Appl. Phys. Lett., 62, p. 1797 (1993)Google Scholar