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Autostoichiometric Vapor Deposition of Multicomponent Oxides

Published online by Cambridge University Press:  15 February 2011

K.W. Chour  and
R. Xu
K.W. Chour
Affiliation:
Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT 84112
R. Xu
Affiliation:
Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT 84112
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Abstract

The theoretical basis of an autostoichiometric vapor deposition method is discussed. We try to define and analyze through the stagnant film model for vapor deposition, the mechanism through which the stoichiometry of a multicomponent oxide film can be precisely controlled. It is found that the utilization of a thermally stable, heterometallic molecular precursor, and a chemical reaction scheme which partially protects the integrity of the precursor molecule during deposition are essential for autostoichiometric vapor deposition. An ideal deposition reaction is the vapor phase hydrolysis, substrate surface polycondensation of volatile double alkoxides. A simple low pressure apparatus can be used to realize autostoichiometric vapor deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 367
Copyright
Copyright © Materials Research Society 1995

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References

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