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Bandgap Engineering of ZnO Transparent Conducting Films

Published online by Cambridge University Press:  01 February 2011

K. Matsubara ,
H. Tampo ,
A. Yamada ,
P. Fons ,
K. Iwata ,
K. Sakurai  and
S. Niki
K. Matsubara
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
H. Tampo
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
A. Yamada
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
P. Fons
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
K. Iwata
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
K. Sakurai
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
S. Niki
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
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Abstract

Low resistivity and transparent Al doped ZnMgO films were deposited on glass substrates by a pulsed laser deposition system. For up to 32 atm% of Mg content, segregation of a MgO phase was not observed. The bandgap of these films could be widened to about 4 eV with increasing Mg content. The relation between bandgap and resistivity was found to be a trade-off; i.e. the larger the bandgap, the higher the resistivity. The maximum bandgap among films with an electrical resistivity of less than 10-3 Ω cm was 3.94 eV. The average optical transmittance of these films was more than 90 % for wavelengths λ between 400 and 1100 nm. The transmittance around λ = 330 nm was still 50 %.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B7.2
Copyright
Copyright © Materials Research Society 2003

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