Hostname: page-component-848d4c4894-wg55d Total loading time: 0 Render date: 2024-05-16T09:45:46.136Z Has data issue: false hasContentIssue false
  • English
  • Français

Bath Additive and Current Density Effects on Copper Electroplating Fill of Cu Damascene Structures

Published online by Cambridge University Press:  10 February 2011

Robert D. Mikkola ,
Qing-Tang Jiang ,
Ronald Carpio  and
Brad Carpenter
Robert D. Mikkola
Affiliation:
Sematech, 2706 Montopolis Dr., Austin, TX 78741. APRDL, Motorola Inc., 3501 Ed Bluestein Boulevard, Austin, TX 78721.
Qing-Tang Jiang
Affiliation:
Sematech, 2706 Montopolis Dr., Austin, TX 78741. National Semiconductor Inc., 2900 Semiconductor Dr., Santa Clara, CA 95052.
Ronald Carpio
Affiliation:
Sematech, 2706 Montopolis Dr., Austin, TX 78741.
Brad Carpenter
Affiliation:
Semitool Inc., 655 West Reserve Dr., Kalispell, MT 59901.
Get access

Abstract

Copper electroplating has become the leading technology for gap fill of damascene structures on advanced interconnects. A key to developing a robust electroplating process that produces deposits free of voids and seams is understanding the role of the additive components, i.e., levelers, brighteners and wetting agents, and their relative diffusion/adsorption characteristics. Additionally, obtaining insight about the cathodic current/potential relationship is critical for maximizing the effectiveness of the additive components.

Our results indicate that bath additive composition and the plating parameters (plating pulse frequency, and current density play critical roles in the outcome of the Cu fill. SEM cross sectional analysis of timed partial electroplating fill studies show two types of fill, 1) conformal and 2) bottom-up. Conformal fill of features smaller than 0.25 μm with an aspect ratio (AR) of 4.0 tends to form seam voids in the center of the structure. These seam voids can lead to early electromigration failures. On the other hand, bottom-up fill leads to a void free Cu deposit within the feature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 399
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Andricacos, P.C., Uzoh, C., Dukovic, J.O., Horkans, J., Deligianni, H., IBM J. Res. Develop., 42, NO. 5 Sept. 1998 Google Scholar
2. Ryan, James G., Heidenreich, John E., Cote, William J., Geffken, Robert M., Theis, Thomas N., “Advanced Metallization and Interconnect Systems for ULSI Applications in 1997”, Mater. Res. Soc. 1997, 399 Google Scholar
3. Takahashi, K. and Gross, M., Advanced Metal. Conf., 1998 Google Scholar
4. Gross, M., Takahashi, K., Lingk, C., Ritzdorf, T., Gibbons, K., Advanced Metal. Conf., 1998Google Scholar
5. Mirkova, L., S Rashkov, T., Nanev, C H R., Surf. Tech., 15, 181(1982)10.1016/0376-4583(85)90060-3Google Scholar
6. Reid, J.D., David, A.P., Plat. and Surf. Finish., 84, p 66 (Jan. 1997)Google Scholar
7. Madore, C., Matlosz, M., Landolt, D., J. Electrochem.Soc., 143, NO. 12, 3927 (1996)10.1149/1.1837318Google Scholar
8. Hope, Gregory A., Brown, Glen M., Electrochem. Soc. Proceedings, 96–8, 215(1996)Google Scholar
9. Kelly, James, West, Allan C., J. Electrochem. Soc., 145, No. 10, 3477 (1998)10.1149/1.1838830Google Scholar
10. Farndon, E.E., Walsh, F.C., Campbell, S.A., J. App. Electrochem, 25, 574 (1995)10.1007/BF00573215Google Scholar
11. Aroyo, M.S., Plat. and Surf. Finish., 82, p.53 (November 1995)Google Scholar
12. Hull, R.O., Amer. Electroplat. Soc., 27, 52 (1939)Google Scholar
13. Sun, B., Chiang, T., Ding, P., and Chin, B., “Advanced Metallization and Interconnect Systems for ULSI Applications in 1997”, Mater. Res. Soc. 1997, 137 Google Scholar