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Blue Light Emission from PECVD Deposited Nanostructured SiC

Published online by Cambridge University Press:  01 February 2011

Liudmyla Ivashchenko ,
Andriy Vasin ,
Volodymyr Ivashchenko ,
Mykola Ushakov  and
Andriy Rusavsky
Liudmyla Ivashchenko
Affiliation:
ivash@ipms.kiev.ua, Institute for Problems of Material Science, NAS of Ukraine, Lab. ¹ 61, 3 Krzhyzhanovsky str., 03142 Kyiv, Ukraine, Kyiv, 03142, Ukraine, +38-044-4242540, +38-044-4242131
Andriy Vasin
Affiliation:
vasin@lab15.kiev.ua, Institute of Semiconductor Physics, NAS, Ukraine, Lab.¹15, Kyiv, N/A, 03026, Ukraine
Volodymyr Ivashchenko
Affiliation:
ivash@materials.kiev.ua, Institute for Problems of Material Science, NAS Ukraine, Lab.¹61, Kyiv, N/A, 03142, Ukraine
Mykola Ushakov
Affiliation:
ivash@materials.kiev.uaInstitute for Problems of Material Science, NAS, UkraineLab.¹61KyivN/A03142Ukraine
Andriy Rusavsky
Affiliation:
vasin@lab15.kiev.ua, Istitute of Semiconductor Physics, NAS, Ukraine, Kyiv, N/A, 03026, Ukraine
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Abstract

Experimental data on the room temperature blue light emission from nanocrystalline silicon carbide (nc-SiC) films are presented. The silicon carbide films were deposited on silicon substrates with a plasma enhanced chemical vapor deposition (PECVD) reactor from methyltrichlorosilane at substrate temperature in the range of 200-350°C. The film deposited at 350°C is nanostructured and X-ray diffraction proves the presence of the 3C-SiC crystallites. Infrared absorption spectroscopy in the region of Si-C, C-H, C-O, Si-H and Si-O bonds show the corresponding absorption bands. X-ray photoelectron spectroscopy studies confirm this bond picture. Photoluminescence was measured at 77 and 300 K. The bright blue emission has a double-peak structure at 415 and 437 nm. To clarify the origin of such an emission, tight binding molecular dynamics (TB-MD) simulations of several SiC and Si nanoclusters were carried out. Based on the temperature dependence of the photoluminescence and on the simulation data, a possible model of radiative recombination in nc-SiC films was proposed. According to this model, the emission bands at 415 and 437 nm are assigned to band-to-band and band-to-tail recombination in the nanocrystallite core. The recombination at band tails of the interface and Si-C-O-H amorphous tissue gives rise to a shoulder around 470 nm.

Keywords

plasma-enhanced CVD (PECVD) (chemical reaction)photoemissionSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A12-03
Copyright
Copyright © Materials Research Society 2006

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