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Boron and Phosphorus Ion Implantation In a-SixC1−x:H Thin Films

Published online by Cambridge University Press:  16 February 2011

R. Rizzoli ,
R. Galloni ,
C. Summonte ,
F. Demichelis ,
C.F. Pirrp ,
E. Tresso ,
G. Crovini ,
P. Rava  and
F. Zignani
R. Rizzoli
Affiliation:
CNR-Lamel, via Gobetti 101, 40129 Bologna, Italy
R. Galloni
Affiliation:
CNR-Lamel, via Gobetti 101, 40129 Bologna, Italy
C. Summonte
Affiliation:
CNR-Lamel, via Gobetti 101, 40129 Bologna, Italy
F. Demichelis
Affiliation:
Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
C.F. Pirrp
Affiliation:
Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
E. Tresso
Affiliation:
Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
G. Crovini
Affiliation:
Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
P. Rava
Affiliation:
Elettrorava S.p.A., via Don Sapino 176, 10040 Savonera (Torino), Italy
F. Zignani
Affiliation:
Facolta’ di Ingegneria, Universita’ di Bologna, 40100 Bologna, Italy.
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Abstract

In this paper we report results on the optoelectronic and structural properties of device-quality a-SixC1−x:H intrinsic films with energy gap of 1.94 eV and Urbach energy of 70 MeV, grown by PECVD of SiH4+CH4 Mixture, which have been doped by means of boron or phosphorus ion implantation. Doping levels varied in the range 1018 to 5×1020 atoms/cm3. The behaviour of electrical characteristics, as well as energy gap and defect density, Measured on samples annealed in the range 150–400°C, showed that the optimum annealing temperature for the recovery of radiation damage is in the range 250–270°C independent of the implanted dose. Our results also show that after ion implantation and annealing, an increase of the SiH bonds concentration is detected, which is associated to a decrease of the contribution of SiH2, SiCH3, and SiCH vibrations in IR spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 571
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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