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Boron Doped Polycrystalline Silicon Produced By Step-by-Step XeCl Excimer Laser Crystallization

Published online by Cambridge University Press:  01 February 2011

Rosari Saleh  and
Norbert H Nickel
Rosari Saleh
Affiliation:
rosarisaleh@research-ui.org, Universitas Indonesia, Jurusan Fisika FMIPA, Kampus Baru Universitas Indonesia Depok, Depok, N/A, 16424, Indonesia, +62-21-7694975, +62-21-7515171
Norbert H Nickel
Affiliation:
Nickel@hmi.de, Hahn Meitner Institute, Kekulestr.5, Berlin, N/A, 12489, Germany
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Abstract

A series of boron doped polycrystalline silicon were produced using step-by-step laser crystallization process from amorphous silicon. The influence of doping concentrations on laser- induced dehydrogenation and crystallization of amorphous silicon and on hydrogen bonding have been investigated employing Raman spectroscopy and hydrogen effusion measurements. From hydrogen effusion spectra the hydrogen chemical potential is determined as a function of hydrogen concentration, which can be related to the hydrogen density-of-states distribution. The results from hydrogen effusion are consistent with the results obtained from Raman spectroscopy.

Keywords

laser annealingRaman spectroscopypolycrystal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A23-02
Copyright
Copyright © Materials Research Society 2006

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