Hostname: page-component-76fb5796d-9pm4c Total loading time: 0 Render date: 2024-04-25T23:05:09.027Z Has data issue: false hasContentIssue false
  • English
  • Français

Ca2RuO4Thin Film Growth by Pulsed Laser Deposition

Published online by Cambridge University Press:  15 March 2011

Xu Wang ,
Yan Xin ,
Hanoh Lee ,
Patricia A. Stampe ,
Robin J. Kennedy ,
Zhixian Zhou  and
Jim P. Zheng
Xu Wang
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL 32310, USA
Yan Xin
Affiliation:
Magnet Science and Technology, National High Magnetic Field Laboratory, Tallahassee, FL 32310, USA
Hanoh Lee
Affiliation:
Department of Physics, Florida State University, Tallahassee, FL 32310, USA
Patricia A. Stampe
Affiliation:
Department of Physics, Florida A&M University, Tallahassee, FL 32307, USA
Robin J. Kennedy
Affiliation:
Department of Physics, Florida A&M University, Tallahassee, FL 32307, USA
Zhixian Zhou
Affiliation:
Department of Physics, Florida State University, Tallahassee, FL 32310, USA
Jim P. Zheng
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL 32310, USA
Get access

Abstract

Bulk Ca2RuO4 is an antiferromagnetic Mott insulator with the metal-insulator transition above room temperature, and the Neel temperature at 113 K. There is strong coupling between crystal structures and magnetic, electronic phase transitions in this system. It exhibits high sensitivity to chemical doping and pressure that makes it very interesting material to study. We have epitaxially grown Ca2RuO4 thin films on LaAlO3 substrates by pulsed laser deposition technique. Growth conditions such as substrate temperature and O2 pressure were systematically varied in order to achieve high quality single-phase film. Crystalline quality and orientation of these films were characterized by X-ray diffractometry. Microstructure of the thin films was examined by transmission electron microscopy. The electrical transport properties were also measured and compared with bulk single crystal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 819: Symposia N/P – Interfacial Engineering for Optimized Properties III , 2004 , N3.16
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Maeno, Y., Hashimoto, H., Yoshida, K., Nishizaki, S., Fujita, T., Bednorz, J. G., and Lichtenberg, F., Nature (London) 372, 532 (1994).Google Scholar
2. Alexander, C. S., Cao, G., Dobrosavljevic, V., McCall, S., Crow, J. E., Lochner, E., Guertin, R. P.: Phys. Rev. B 60, R8422 (1999).Google Scholar
3. Fukazawa, H., Nakatsuji, S., Maeno, Y.: Physica B 281&282, 613 (2000).Google Scholar
4. Nakamura, F., Goko, T., Ito, M., Fujita, T., Nakatsuji, S., Fudazawa, H., Maeno, Y., Alireza, P., Forsythe, D., and Julian, S. R.: Phys. Rev. B 65, 220402(R) (2002).Google Scholar
5. Nakamura, F., Senoo, Y., Goko, T., Ito, M., Suzuki, T., Nakatsuji, S., Fukazawa, H., Maeno, Y., Alireza, P., Julian, S.R.: Physica B 329–333 803 (2003).Google Scholar
6. Fukazawa, H., and Maeno, Y.: J. Phys. Soc. Jpn, 70, 460 (2001).Google Scholar
7. Cao, G., McCall, S., Dobrosavljevic, V., Alexander, C. S., Crow, J. E. and Guertin, R. P.: Phys. Rev. B 61, R5053 (2000).Google Scholar
8. Rao, R.A., Gan, Q., Eom, C.B., Cava, R.J., Suzuki, Y., Krajewski, J.J., Gausepohl, S.C., Lee, M., Appl. Phys. Lett., 70, 3035 (1997).Google Scholar
9. Braden, M., Andre, G., Nakatsuji, S., Maeno, Y.: Phys. Rev. B 58, 847 (1998).Google Scholar