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Carbon Nitride Films Using a Filtered Cathodic ARC

Published online by Cambridge University Press:  21 February 2011

Scott.M. Camphausen ,
D.A. Tucker ,
J. Bruley  and
J.J. Cuomo
Scott.M. Camphausen
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695
D.A. Tucker
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695
J. Bruley
Affiliation:
Lehigh University, Department of Materials Science and Engineering, Bethlehem, PA 18015
J.J. Cuomo
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695
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Abstract

Carbon nitride films were deposited on sapphire, silicon, molybdenum and quartz substrates using a filtered cathodic arc with a radio frequency (rf) inductively coupled plasma, Previous researchers have used the cathodic arc but obtained low concentrations of nitrogen in their films. the addition of the rf coils was used to enhance dissociation of molecular nitrogen in the vicinity of the substrate. the resultant films were analyzed for chemical bonding and composition by several methods including Electron Energy Loss Spectroscopy (EELS), augei Electron Spectroscopy (AES), and infrared spectroscopy (IR). EELS and IR provided bonding information and showed that the films were largely composed of sp2 bonding and contained carbon-nitrogen double bonds, respectively. also, chemical composition of the films was determined using aES, IR and EELS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 287
Copyright
Copyright © Materials Research Society 1995

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References

1 Liu, A.Y. and Cohen, M.L., Science 11, 841 (1989).Google Scholar
2 Chen, M.Y., Li, D., Lin, X., Dravid, V.P., Yip, W.C., Ming, S.W., and Sproul, W.D., J. Vac. Sci. Technol. A 11, 521 (1993).Google Scholar
3 Li, D., Chung, Y.W., Wong, M.S., and Sproul, W.D., J. appl. Phys. 74, 219 (1993).Google Scholar
4 Nakayama, N., Tsuchiya, Y., Tamada, S., Kosuge, K., Nagata, S., Takahiro, K., and Yamaguchi, S., Jpn. J. appl. Phys. 32, L1465 (1993).Google Scholar
5 Kumar, S. and Tansley, T.L., Solid State Commun. 88, 803 (1993).Google Scholar
6 Ogata, K., Fernando, D.C.J., and Fujimoto, F., J. appl. Phys. 76, 3791 (1994).Google Scholar
7 Marton, D., Al, B.A.H., Todorov, S.S., Boyd, K.J., and Rabalais, J.W., Nucl. INstr. and Meth. B90, 277 (1994).Google Scholar
8 Yu, K.M., Cohen, M.L., Haller, E.E., Hansen, W.L., Liu, A.Y., and Wu, I.C., Phys. Rev. B 49, 5034 (1994).Google Scholar
9 Davis, C.A., McKenzie, D.R., Yin, Y., Kravtchinskaia, E., G.Amaratunga, A.J., and Veerasamy, V.S., Philos. Mag. B 69, 1133 (1993).Google Scholar
10 Lossy, R., Pappas, D.L., Roy, R.A., Cuomo, J.J., and Sura, V.M., Appl. Phys. Lett. 61, 171 (1992).Google Scholar