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Carbon-Rich a-SiC:H Alloys as Dielectric Materials: Injection Mechanisms in Mim-Type Structures

Published online by Cambridge University Press:  01 January 1993

R. Vincenzoni ,
G. Masini ,
G. Leo ,
G. Guattari  and
F. Galluzzi
R. Vincenzoni
Affiliation:
Dept. of Electronic Engineering,University of Rome, Via Eudossiana 18, 00184 Rome, Italy
G. Masini
Affiliation:
Dept. of Electronic Engineering,University of Rome, Via Eudossiana 18, 00184 Rome, Italy
G. Leo
Affiliation:
Dept. of Electronic Engineering,University of Rome, Via Eudossiana 18, 00184 Rome, Italy
G. Guattari
Affiliation:
Dept. of Electronic Engineering,University of Rome, Via Eudossiana 18, 00184 Rome, Italy
F. Galluzzi
Affiliation:
Dept. of Electronic Engineering,University of Rome, Via Eudossiana 18, 00184 Rome, Italy
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Abstract

Electronic properties of C-rich a-Si1 -xCx:H alloys are investigated through the characterization of MIM-type structures, by means of current-voltage measurements carried out at different temperatures. These measurements provide some new insight in both the dielectric behavior of the material and the physics of the metal/a-Si1-xCx:H junction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 687
Copyright
Copyright © Materials Research Society 1993

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References

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