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CAT-CVD Process and its Application to Preparation of Si-Based Thin Films

Published online by Cambridge University Press:  15 February 2011

Hideki Matsumura ,
Atsushi Masuda  and
Akira Izumi
Hideki Matsumura
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa 923-1292, Japan, TEL (+81)-761-51-1560, FAX (+81)-761-51-1149, E-mail;, h-matsu@jaist.ac.jp
Atsushi Masuda
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa 923-1292, Japan, TEL (+81)-761-51-1560, FAX (+81)-761-51-1149
Akira Izumi
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa 923-1292, Japan, TEL (+81)-761-51-1560, FAX (+81)-761-51-1149
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Abstract

This is to review the present understanding on Cat-CVD (catalytic chemical vapor deposition) or hot wire CVD. Firstly, the deposition mechanism in Cat-CVD process is briefly mentioned along with key issues such as the effect of heat radiation and a method to avoid contamination from the catalyzer. Secondly, the properties of Cat-CVD Si-based thin films such as amorphous silicon (a-Si), polycrystalline silicon (poly-Si) and silicon nitride (SiNx) films are demonstrated, and finally, the feasibility of such films for industrial application is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 67
Copyright
Copyright © Materials Research Society 1999

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