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Cathodoluminescence Spectroscopy Studies of Growth Induced Deep Levels at GaInP.

Published online by Cambridge University Press:  22 February 2011

R. Enrique Viturro ,
John D. Varriano  and
Gary W. Wicks
R. Enrique Viturro
Affiliation:
Xerox Webster Research Center, 114-41D, 800 Phillips Rd., Webster, NY 14580.
John D. Varriano
Affiliation:
Institute of Optics, University of Rochester, Rochester, NY 14620.
Gary W. Wicks
Affiliation:
Institute of Optics, University of Rochester, Rochester, NY 14620.
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Abstract

We report a cathodoluminescence spectroscopy study of growth-induced deep levels at GaInP epilayers grown by Molecular Beam Epitaxy under various conditions. This approach allows the identification of deep levels which appear to play an important role in the band to band radiative recombination efficiency of these GaInP films. Control of these electronic defects is crucial for the performance of visible optoelectronic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 513
Copyright
Copyright © Materials Research Society 1994

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