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C-Axis Resistivity of SbCl5-Graphite in Hopg and Single Crystal Forms

Published online by Cambridge University Press:  15 February 2011

C. Uher  and
D.T. Morelli
C. Uher
Affiliation:
Physics Department, The University of Michigan, Ann Arbor, MI 48109, USA
D.T. Morelli
Affiliation:
Physics Department, The University of Michigan, Ann Arbor, MI 48109, USA
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Abstract

C-axis electrical resistivities were measured from 2-300K on SbCl5-graphite intercalation compounds, using both HOPG and single crystals as host materials. The resistivity of these compounds is up to an order of magnitude higher (˜10−2Ωm) than that of pure HOPG graphite. Yet, for stage n≤3 (in the case of HOPG), a metallic temperature dependence of ρC is observed throughout the entire investigated range. Higher stage compounds show metallic behavior at high temperatures, but exhibit a crossover to an activated dependence as the temperature is lowered. All samples show hysteretic behavior with cycling. A model, based on defect-mediated short-circuiting channels, is proposed to account for the existence of a metallic temperature dependence in conjunction with large resistivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 20: Symposium H – Intercalated Graphite , 1982 , 163
Copyright
Copyright © Materials Research Society 1983

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References

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