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Characterization and Modeling of Frequency Dispersion in Amorphous Silicon Thin Film Transistors

Published online by Cambridge University Press:  15 February 2011

H. C Slade ,
M. S. Shur  and
T. Ytterdal
H. C Slade
Affiliation:
Rensselaer Polytechnic Institute, ECSE Dept., Troy, NY 12180 University of Virginia, Electrical Engineering, Thornton Hall, Charlottesville, VA 22903–2442
M. S. Shur
Affiliation:
Rensselaer Polytechnic Institute, ECSE Dept., Troy, NY 12180
T. Ytterdal
Affiliation:
Rensselaer Polytechnic Institute, ECSE Dept., Troy, NY 12180
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Abstract

The large number of localized energy states in amorphous and polysilicon thin film transistors causes non-crystalline effects in both the DC and AC transistor characteristics. The observed frequency dispersion of the device capacitances is linked to the characteristic times of electron trapping and emission from localized thin film transistors and is modeled analytically by introducing effective RC time constants, which are proportional to the electron transit times, determined by the field effect mobility. The small-signal gate-to-source and gate-to-drain capacitances have been derived using Meyer's approach, which takes into account the non-zero drain-source voltage to achieve a partitioning of the channel capacitance. We have verified the model for amorphous silicon thin film transistors for varying gate lengths and frequencies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 881
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Shur, M. S., Slade, H.C., Ytterdal, T., Wang, L., Xu, Z., Hack, M., Aflatooni, K., Byun, Y., Chen, Y., Froggatt, M., Krishnan, A., Mei, P., Meiling, H., Min, B.-H., Nathan, A., Sherman, S., Stewart, M., and Theiss, S., this conference.Google Scholar
[2] Jacunski, M.D., Shur, M.S., Ytterdal, T., Owusu, A.A., and Hack, M., Mat. Res. Soc. Proc, 424, 213 (1996).Google Scholar
[3] Lee, K., Shur, M., Fjeldly, T.A., and Ytterdal, T., Semiconductor Device Modeling for VLSI (Prentice Hall, Englewood Cliffs, NJ, 1993), p. 309.Google Scholar
[4] Shaw, J. G., and Hack, M., J. Appl. Phys., 64 (9), 4562 (1988).Google Scholar
[5] Jacunski, M.J., Ph.D. Dissertation, Universityyp of Virginia, Charlottesville, VA (1996).Google Scholar
[6] Greve, D. and Hay, V., J. Appl. Phys., 61, 1176 (1987).Google Scholar
[7] BSIM3v3 Manual. University of California (1995).Google Scholar
[8] Lee, K., Shur, M., Fjeldly, T.A., and Ytterdal, T., Semiconductor Device Modeling for VLSI(Prentice Hall, Englewood Cliffs, NJ, 1993), p. 302.Google Scholar
[9] Slade, H.C., Ph.D. Dissertation, University of Virginia, Charlottesville, VA (1997).Google Scholar
[10] http//www.aimspice.com/ Google Scholar