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Characterization and Physics of Threshold Voltage Dependence on Defect Related Properties of Channel-Buffer (Substrate) Interfaces in GaAs MESFET's Fabricated By Molecular Beam Epitaxy

Published online by Cambridge University Press:  26 February 2011

K. Shenai
K. Shenai*
Affiliation:
General Electric Corporate Research and Development, River Road, Schenectady, NY 12309
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Abstract

A fundamental understanding of the channel-buffer (substrate) interface is obtained from the experimental and theoretical investigation of long channel GaAs MESFET's fabricated by molecular beam epitaxy (MBE). The threshold voltage dependence on the semiconductor crystal lattice temperature indicates that the steady-state carrier trapping and accumulation of negative charge in donor-like states at the channel-buffer (substrate) interface play a detrimental role both in the linear and saturated regimes of device operation. The variations of the threshold voltage and gate capacitance with substrate bias are consistent with each other and suggest that significant reduction in the channel charge occurs with increased reverse bias on the substrate. The threshold voltage is found to decrease significantly as the sample temperature is increased both in the linear and saturated regimes of device operation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 191
Copyright
Copyright © Materials Research Society 1988

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References

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