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Characterization of Boron Carbo-Nitride Films Deposited By Low Temperature Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

E. R. Engbrecht ,
C. J. Cilino ,
K. H. Junker ,
Y.M Sun ,
J. M. White  and
J. G. Ekerdt
E. R. Engbrecht
Affiliation:
Department of Chemistry and Biochemistry, University of Texas, Austin, TX 78712
C. J. Cilino
Affiliation:
Department of Chemistry and Biochemistry, University of Texas, Austin, TX 78712
K. H. Junker
Affiliation:
Motorola Semiconductor Products Sector, Austin, TX 78721
Y.M Sun
Affiliation:
Department of Chemistry and Biochemistry, University of Texas, Austin, TX 78712
J. M. White
Affiliation:
Department of Chemistry and Biochemistry, University of Texas, Austin, TX 78712
J. G. Ekerdt
Affiliation:
Department of Chemical Engineering, University of Texas, Austin, TX 78712
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Abstract

This study reports low temperature chemical vapor deposition of amorphous boron carbonitride films on SiO2 using a dimethylamine borane complex at temperatures ranging from 360 to 500°C and with varying NH3 flow at 360°C. The dielectric constant, k, of the films ranged from 4.11 to 4.83, and increased with temperature while the addition of nitrogen using NH3 decreased k. The index of refraction changed correspondingly with k, ranging from 1.826 to 2.226. Higher substrate temperature caused nitrogen and carbon content to increase with additional bonding to boron. The addition of ammonia increased the N:B ratio to as high as 0.64 and reduced k to 4.11. The higher nitrogen incorporation displaced both boron and carbon in the film, leaving boron bonded primarily to nitrogen and other boron atoms. These films were amorphous with smooth surfaces of RMS roughness ranging from 0.30 nm to 0.53 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E8.21
Copyright
Copyright © Materials Research Society 2003

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