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Characterization Of Boron Films Prepared By Chemical Vapor Deposition And Their Application In X-Ray Imaging

Published online by Cambridge University Press:  15 February 2011

Fang Yuan  and
David D. Allred
Fang Yuan
Affiliation:
Department of Physics and Astronomy, Brigham Young University, Provo, UT 84602
David D. Allred
Affiliation:
Department of Physics and Astronomy, Brigham Young University, Provo, UT 84602
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Abstract

Boron, a low Z element, is useful for x-ray optics since it has a low atomic absorption coefficient. Boron films prepared by chemical vapor deposition were characterized optically, electronically and mechanically. Auger, infrared and hydrogen effusion analyses showed that the films are amorphous hydrogenated boron. The hydrogen content ranges from 8–71%. The measurements of the complex refractive index and the resistance vs. temperature determined that they are a typical amorphous semiconductor with the energy gap ranging from 1.09 to 1.36 eV, decreasing with increasing hydrogen content and with the Fermi energy level pinned about midgap. The real refractive index at 490 nm increases from 3.25–3.59 with increasing hydrogen content. The Young's modulus and hardness were found to be 3.05 × 1013 dyne/cm2 and around 2500 Vickers, respectively. The chemical tests suggested that boron films are stable in nonoxidizing bases and concentrated acids. Some oxidizing bases such as basic ferricyanide and permanganate solutions are good etchants for CVD boron films. Boron coated beryllium x-ray windows which have enhanced resistance to degradation are now commercially available, and self-supporting boron windows are potential future products for x-ray imaging.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 306: Symposium K – Materials Aspects of X-Ray Lithography , 1993 , 189
Copyright
Copyright © Materials Research Society 1993

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