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Characterization of Defects in Silicon Ribbons By Combined Ebic and Hvem

Published online by Cambridge University Press:  15 February 2011

Horst Strunk ,
Brian Cunningham  and
Dieter Ast
Horst Strunk
Affiliation:
Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, New York 14853
Brian Cunningham
Affiliation:
Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, New York 14853
Dieter Ast
Affiliation:
Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, New York 14853
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Abstract

The electrical properties and crystallographic nature of linear and planar defects in EFG silicon ribbons were studied. A direct correlation between electrical and structural properties was obtained by imaging the same areas first with EBIC and then with HVEM. Coherent twin boundaries were found to be electrically inactive, but higher order twins and other grain boundaries generally enhanced minority carrier recombination. Partial dislocations confined to coherent twin boundaries were usually electrically active, but in certain instances partial dislocations were observed which had no apparent EBIC contrast.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 297
Copyright
Copyright © Materials Research Society 1981

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References

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