Hostname: page-component-848d4c4894-wg55d Total loading time: 0 Render date: 2024-05-21T11:35:05.797Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Epitaxial CoSi2 Films Grown on <111> Si

Published online by Cambridge University Press:  25 February 2011

A. H. Hamdi ,
M-A. Nicolet ,
Y. C. Kao ,
M. Tejwani  and
K. L. Wang
A. H. Hamdi
Affiliation:
Electrical Engineering Department, California Institute of Technology, Pasadena, California 91125
M-A. Nicolet
Affiliation:
Electrical Engineering Department, California Institute of Technology, Pasadena, California 91125
Y. C. Kao
Affiliation:
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90024
M. Tejwani
Affiliation:
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90024
K. L. Wang
Affiliation:
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90024
Get access

Abstract

X-ray rocking curves and backscattering spectrometry with channeling have been employed to investigate epitaxial CoSi2 films grown on <111> Si substrates. Several preparation techniques were used: sputter cleaning, chemical cleaning, chemical cleaning with subsequent high temperature annealing, and e-gun evaporation on a cold or hot Si substrate, in situ annealing between 550–750°C for 30 min. Best results were obtained with chemical cleaning and pre-annealing at 925°C for 10 min, Co and Si codeposition on a 580'C hot substrate. For such samples, a typical x-ray perpendicular strain is -2.08%, and parallel strain is -0.11%. This parallel strain implies that the growth has been accommodated by dislocations with a spacing of ,∼ 2000 Å. The values of strain are consistent with the published lattice constants of Si and CoSi2 and Poisson's ratio of 0.28. The minimum yield in the channeling spectra of these films is. ∼ 3.6%, which is only slightly higher than that of <111> virgin Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 41: Symposium K – Advanced Photon and Particle Techniques for the Characterization of Defects in Solids , 1984 , 355
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Saitoh, S., Ishiwara, H., Asano, T., and Furukawa, S., Jap. J. Appl. Phys. 20, 1649 (1981).10.1143/JJAP.20.1649Google Scholar
2. Hensel, J. C., Tung, R. T., Poate, J. M., and Unterwald, F. C., Appi. Phys. Lett. 44, 913 (1984).10.1063/1.94932Google Scholar
3. Nicolet, M-A. and Lau, S. S.: in VLSI Electronics: Microstructure Science, Vol.6, edited by Einspruch, N. G. (Series Ed.), Materials and Process Characterization, edited by N. G. Einspruch and G. B. Larrabee, (Academic Press, New York, 1983), Chap. 6.10.1016/B978-0-12-234106-9.50011-8CrossRefGoogle Scholar
4. Murarka, S. P.: Silicides for VLSI Applications, (Academic Press, New York, 1983).Google Scholar
5. Kern, W. and Puotinen, D., RCA Rev, 31, 187 (1970).Google Scholar
6. Gibson, J. M., Bean, J. C., Poate, J. M., and Tung, R. T.: in Thin Films and Interfaces, edited by Ho, P. S. and Tu, K. N., (Materials Research Society, North-Holland, New York, 1982), Vol.10.Google Scholar
7. We thank Prof. Vreeland, T., Jr. (Caltech) for the helpful discussion.Google Scholar
8. Hornstra, J. and Bartels, W. J., J. Crystal Growth, 44, 513 (1978).10.1016/0022-0248(78)90292-0CrossRefGoogle Scholar
9. Brantley, W. A., J. Appl. Phys. 44, 534 (1973).10.1063/1.1661935Google Scholar
10. Ishibashi, K. and Furukawa, S., Appl. Phys. Lett. 43, 660 (1983).10.1063/1.94437Google Scholar
11. Feldman, L. C., Mayer, J. W., and Picraux, S. T., Materials Analysis by Ion Channeling, (Academic Press, New York, 1982).Google Scholar
12. Hamdi, A. H., Tandon, J. L., and Nicolet, M-A., Mater. Lett. 2, 437 (1984).10.1016/0167-577X(84)90157-5Google Scholar