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Characterization of GaAs and Ge Films on (100) Silicon

Published online by Cambridge University Press:  28 February 2011

J.-M. Baribeau ,
D.C. Houghton ,
P. MaignÉ ,
W.T. Moore ,
R.L.S. Devine ,
M.W. Denhoff ,
R.J. Stoner ,
J. Mccaffrey  and
T.E. Jackman
J.-M. Baribeau
Affiliation:
National Research Council Canada, Division of Physics, Ottawa, CanadaKIA OR6
D.C. Houghton
Affiliation:
National Research Council Canada, Division of Physics, Ottawa, CanadaKIA OR6
P. MaignÉ
Affiliation:
National Research Council Canada, Division of Physics, Ottawa, CanadaKIA OR6
W.T. Moore
Affiliation:
National Research Council Canada, Division of Physics, Ottawa, CanadaKIA OR6
M.W. Denhoff
Affiliation:
National Research Council Canada, Division of Physics, Ottawa, CanadaKIA OR6
R.J. Stoner
Affiliation:
National Research Council Canada, Division of Physics, Ottawa, CanadaKIA OR6
J. Mccaffrey
Affiliation:
National Research Council Canada, Division of Physics, Ottawa, CanadaKIA OR6
T.E. Jackman
Affiliation:
National Research Council Canada, Division of Physics, Ottawa, CanadaKIA OR6
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Abstract

A UHV MBE apparatus in which the deposition of both group IV and group III-V components is possible without breaking vacuum has been utilized to compare the growth of GaAs epilayers on non-polar Si(100) and Ge coated Si(100) substrates. In addition, a comparison of GaAs epilayers grown on substrates cleaned by ex-situ techniques and on substrates given all UHV in-situ surface preparation was made. Defect reduction by the incorporation of strained-layer superlattice dislocation filters and by post-growth rapid thermal anneal (RTA) thermal cycles was also investigated. Optical and material properties comparable to MBE grown GaAs/GaAs were obtained for GaAs grown on Ge coated Si(100) substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 175
Copyright
Copyright © Materials Research Society 1987

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