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Characterization of High-k Dielectric Films with Tunneling AFM

Published online by Cambridge University Press:  11 February 2011

Xiang-Dong Wang
Affiliation:
Advanced Products Research and Development Labs (APRDL), Motorola Inc, 2100 E. Elliot Rd. Maildrop EL622, Tempe, AZ 85284
Joe Kulik
Affiliation:
Advanced Products Research and Development Labs (APRDL), Motorola Inc, 2100 E. Elliot Rd. Maildrop EL622, Tempe, AZ 85284
N. V. Edwards
Affiliation:
Advanced Products Research and Development Labs (APRDL), Motorola Inc, 2100 E. Elliot Rd. Maildrop EL622, Tempe, AZ 85284
S. B. Samavedam
Affiliation:
Advanced Products Research and Development Labs (APRDL), Motorola Inc, 2100 E. Elliot Rd. Maildrop EL622, Tempe, AZ 85284
Shifeng Lu
Affiliation:
Advanced Products Research and Development Labs (APRDL), Motorola Inc, 2100 E. Elliot Rd. Maildrop EL622, Tempe, AZ 85284
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Abstract

In this paper, we report the leakage current characterization of HfO2 high-k dielectric thin films by using tunneling AFM, which utilizes a conducting AFM probe to detect current passing through the sample and the probe while simultaneously acquiring a topographic image. We have studied tunneling current behavior of HfO2 films by characterizing the hot spots, which are characterized by excessive local leakage current, as well as the overall current distribution. Tunneling AFM results show sensitive dependence of tunneling current with variation of film thickness. The current distribution can be described approximately by a log-normal distribution, which is consistent with the characteristics of the thickness variation. Furthermore, the film structure and thickness were also characterized with TEM and spectroscopic ellipsometry.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

MRS Bulletin, 27, March, 2002 and references therein.Google Scholar
2. Goto, T., Sakashita, S., Ikeda, H., Sakashita, M., Sakai, A., Zaima, S., Yasuda, Y., Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537), 180(2001).Google Scholar
3. Olbrich, A., Ebersberger, B., Boit, C., Vancea, J., Hoffmann, H., Microelectronics Reliability, 39, 941(1999).Google Scholar
4. Ruskell, T. G., Workman, R. K., Chen, D., Sarid, D., Appl. Phys. Lett., 68, 93(1996).Google Scholar
5. Lin, H.-C., Ying, J.-F., Yamanaka, T., Fang, S. J., Helms, C. R., J. Vac. Sci. Technol., A15, 790(1997).Google Scholar
6. O'Shea, S. J., Atta, R. M., Murrell, M. P., and Welland, M. E., J. Vac. Sci. Technol., B13, 1945(1995).Google Scholar
7. Ando, A., Miki, K., Sakamoto, K., Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537), 124(2001).Google Scholar
8. Porti, M.,, a, Nafría, M., Aymerich, X., Olbrich, A. and Ebersberger, B., Microelectronic Engineering, 59, 265(2001)Google Scholar
9. Simmons, John G. J. of App. Phys. 34, 1793(1963).Google Scholar
10. Fowler, R. H. and Nordheim, L., Proc. R. Soc. London Ser. A. 119, 173(1928).Google Scholar