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Characterization of Ion Irradiated Zirconia-Yttria Films

Published online by Cambridge University Press:  28 February 2011

N. K. Huang ,
Z. R. Feng ,
Z. K. Xiong ,
D. Z. Wang  and
P. L. Wang
N. K. Huang
Affiliation:
Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, P.R. China
Z. R. Feng
Affiliation:
Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, P.R. China
Z. K. Xiong
Affiliation:
Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, P.R. China
D. Z. Wang
Affiliation:
Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, P.R. China
P. L. Wang
Affiliation:
Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, P.R. China
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Abstract

Zirconia-yttria films containing 8.0wt% Y2O3 were prepared on a Si substrate with r.f. magnetron sputtering deposition followed by 170 KeV Ar+ ion irradiation at room temperature. The characterization of these zirconia-yttria films with different ion bombarding doses has been studied by XRD, XPS and AES. It was found that all the films consisted of three portions, the amorphous films deposited with r.f. magnetron-sputtering were partially crystallized and nontransformable tetragonal (T') phase was detected after Ar+ ion bombardment of a dose of 1×1016 ion/cm2, and the oxidized states of Zr3d, Y3d and Ols peaks of XPS were observed under the conditions of argon ion bombardment of different doses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 357
Copyright
Copyright © Materials Research Society 1992

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References

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