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Characterization of Ion-Implanted Si Rapidly Annealed with Incoherent Light

Published online by Cambridge University Press:  15 February 2011

J. L. Benton ,
G. K. Celler ,
D. C. Jacobson ,
L. C. Kimerling ,
D. J. Lischner ,
G. L. Miller  and
Mc.D. Robinson
J. L. Benton
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
G. K. Celler
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
D. C. Jacobson
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
L. C. Kimerling
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
D. J. Lischner
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974 Bell Laboratories, Allentown, Pennsylvania 18103
G. L. Miller
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
Mc.D. Robinson
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Irradiation of Si wafers for 5 to 10 sec with high intensity tungsten halogen lamps produces complete recovery of the displacement damage resulting from ion implantation. Data for two different thermal cycles are presented, with As and B implant doses ranging from 1013 to 1016 ions cm−2. Sheet resistance measurements combined with Rutherford backscattering indicate full electrical activation of dopants with very little diffusion. Carrier lifetimes measured by a photoconductive method and by diode reverse recovery compare favorably with furnace annealing data, and capacitance transient spectroscopy reveals a low density of defects in the junction depletion region. These results combined with the inherent advantages of low cost and high efficiency make Rapid Thermal Annealing ideally suited for VLSI device fabrication.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 765
Copyright
Copyright © Materials Research Society 1982

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References

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