Hostname: page-component-848d4c4894-wg55d Total loading time: 0 Render date: 2024-06-02T06:46:03.277Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of lattice mosaic of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy

Published online by Cambridge University Press:  01 February 2011

Kazuhide Kusakabe ,
Shizutoshi Ando  and
Kazuhiro Ohkawa
Kazuhide Kusakabe
Affiliation:
kusakabe@rs.kagu.tus.ac.jp, Tokyo University of Science, Applied Physics, 1-3 Kazurazaka, Shinjuku, Tokyo, 162-8601, Japan, +81-3-3260-4280, +81-3-3260-4280
Shizutoshi Ando
Affiliation:
ando@rs.kagu.tus.ac.jp, Tokyo University of Science, Electrical Engineering, Japan
Kazuhiro Ohkawa
Affiliation:
ohkawa@rs.kagu.tus.ac.jp, Tokyo University of Science, Applied Physics
Get access

Abstract

Nonpolar a-plane GaN films were grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The as-grown layers were studied by high-resolution x-ray diffraction. The a-plane GaN lattice mosaic is orientation dependent as determined by x-ray rocking curve (XRC) measurements. The tilt mosaic measured with the c-axis within the scattering plane (c-mosaic) was greater than the mosaic measured with the m-axis within the scattering plane (m-mosaic). The mosaic along both azimuths decreased and the c-mosaic/m-mosaic ratio was increased with increase of growth temperature from 1050 °C to 1080 °C. The morphological transition was correlated to change in the a-plane GaN tilt mosaic measured by XRC.

Keywords

epitaxyx-ray diffraction (XRD)nitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF26-05
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Introduction to Nitride semiconductor Blue Laser and Light Emitting Diodes, edited by Nakamura, S. and Chichibu, S. F. (Taylor & Francis, London and New York, 2000).CrossRefGoogle Scholar
[2] Ng, H. M., Appl. Phys. Lett. 80, 4369 (2002).CrossRefGoogle Scholar
[3] Craven, M. D., Lim, S. H., Wu, F., Speck, J. S., and DenBaars, S. P., Appl. Phys. Lett. 81, 469 (2002).CrossRefGoogle Scholar
[4] Haskell, B. A., Wu, F., Matsuda, S., Craven, M. D., Fini, P. T., DenBaars, S. P., Speck, J. S., and Nakamura, S., Appl. Phys. Lett. 83, 1554 (2003).CrossRefGoogle Scholar
[5] Melton, W. A. and Pankove, J. I., J. Cryst. Growth 178, 168 (1997).Google Scholar
[6] Ohkawa, K., Hirako, A., and Yoshitani, M., phys. stat. sol. (a) 188, 621 (2001).3.0.CO;2-V>CrossRef3.0.CO;2-V>Google Scholar
[7] Hirako, A., Yoshitani, M., Nishibayashi, M., Nishikawa, Y., and Ohkawa, K., J. Cryst. Growth 237–239, 931 (2002).CrossRefGoogle Scholar
[8] Hirako, A. and Ohkawa, K., phys. stat. sol. (a) 194, 489 (2002).3.0.CO;2-K>CrossRef3.0.CO;2-K>Google Scholar
[9] Akasaki, I. and Amano, H., Jpn. J. Appl. Phys. 36, 5393 (1997).CrossRefGoogle Scholar
[10] Sasaki, T. and Zembutsu, S., J. Appl. Phys. 61, 2533 (1987).CrossRefGoogle Scholar
[11] Lei, T., Ludwig, K. F. and Moustakas, T. D., J. Appl. Phys. 74, 4430 (1993).CrossRefGoogle Scholar
[12] Schönherr, H. P., Fricke, J., Niu, Z. C., Friedland, K. J., Notzel, R. and Ploog, K. H., Appl. Phys. Lett. 72, 566 (1998).CrossRefGoogle Scholar