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Characterization of P-Type Buffer Layers for SiC Microwave Device Applications

Published online by Cambridge University Press:  10 February 2011

A. O. Konstantinov ,
S. Karlsson ,
P.-Å Nilsson ,
A.-M. Saroukhan ,
J.-O. Svedberg ,
N. Nordell ,
C. I. Harris ,
J. Eriksson  and
N. Rorsman
A. O. Konstantinov
Affiliation:
Industrial Microelectronics Center, IMC, S-164 40 Kista, Sweden
S. Karlsson
Affiliation:
Industrial Microelectronics Center, IMC, S-164 40 Kista, Sweden
P.-Å Nilsson
Affiliation:
Industrial Microelectronics Center, IMC, S-164 40 Kista, Sweden
A.-M. Saroukhan
Affiliation:
Industrial Microelectronics Center, IMC, S-164 40 Kista, Sweden
J.-O. Svedberg
Affiliation:
Industrial Microelectronics Center, IMC, S-164 40 Kista, Sweden
N. Nordell
Affiliation:
Industrial Microelectronics Center, IMC, S-164 40 Kista, Sweden
C. I. Harris
Affiliation:
Industrial Microelectronics Center, IMC, S-164 40 Kista, Sweden
J. Eriksson
Affiliation:
Chalmers University, Dept. of Microwave Technology, Göteborg, Sweden
N. Rorsman
Affiliation:
Chalmers University, Dept. of Microwave Technology, Göteborg, Sweden
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Abstract

Low-loped p-type silicon carbide buffer layers are grown by chemical vapor deposition on conducting and semi-insulating substrates. Capacitance-voltage and electrical admittance techniques are developed for accurate non-destructive characterization. The electrical admittance techniques suggested are capable of measuring the resistivity in a very wide range, up to 7 orders of magnitude. MESFET devices using thick buffer layers on conducting substrates are reported with Ft=8.4 GHz and Fmax=32 GHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 197
Copyright
Copyright © Materials Research Society 1999

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References

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