Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-28T16:07:46.096Z Has data issue: false hasContentIssue false

Characterization of Spin on Glass Using Thermo Analytical Techniques and Ftir Spectroscopy

Published online by Cambridge University Press:  25 February 2011

M. Speciale
Affiliation:
Dipartimento di Scienze Chimiche, viale Andrea Doria 6, 95125 Catania, Italy
C. La Rosa
Affiliation:
Dipartimento di Scienze Chimiche, viale Andrea Doria 6, 95125 Catania, Italy
D. Grasso
Affiliation:
Dipartimento di Scienze Chimiche, viale Andrea Doria 6, 95125 Catania, Italy
A. Porto
Affiliation:
Co.Ri.M.Me., Stradale Primosole 50, 95121 Catania, Italy
P. Lanza
Affiliation:
Dipartimento di Scienze Chimiche, viale Andrea Doria 6, 95125 Catania, Italy
C. Magro
Affiliation:
ST Microelectronics, Stradale Primosole 50, 95121 Catania, Italy
Get access

Abstract

The curing of a commercial ethoxymethyl-phosphosiloxane at different temperatures and under various gas ambients was characterised using NMR, thermoanalytical techniques, and FTIR spectroscopy. DSC (Differential Scanning Calorimetry) and DTG (Differential Thermo Gravimetry) were employed to characterize the reactions that occur during thermal treatments in O2 or N2 atmospheres. FTIR spectroscopy and CP (Cross Polarization) 133C - NMR were used to detect the presence of the hydroxyl and organic groups in the cured samples. The experimental results identified three different temperatures (400,580,700°C) that define important stages of the curing reaction. In particular, for annealing at temperatuires up to 580°C in 02, DSC, DTG and FTIR spectra showed the elimination of the organic groups. However, when the annealing was carried out in N2 up to 700°C, these groups are retained.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Gupta, S.K. and Chin, R.L., Amer. Chem. Soc., Conf., 349 (1986).Google Scholar
2. Geyter, P. De, Brasseur, G. and Coopmans, F., IEEE, VLSI Multilevel Interconnecion Conf., 319 (1986).Google Scholar
3. Chen, S.N., Chao, Y.C., Lin, J.J., Tsai, Y.H. and Tseng, F.C., V-Mic Conf IEEE, 306 (1988).Google Scholar
4. Millan, P.W. Mc and Clebik, A., J. of Non-Crystalline Solids, 38, 509 (1980).Google Scholar
5. Schimdt, H., Mat. Res. Soc. Symp. Proc., 32, 327 (1984).Google Scholar
6. Elkins, P., Reinhard, K., and Tang, R., V-Mic. Conf. IEEE, 100 (1986).Google Scholar
7. Ting, C.H., Lin, H.Y., Pai, P.L. and Oldham, W.G., V-Mic. Conf. IEEE, 61 (1987).Google Scholar
8. Pai, P.L., Chetty, A., Roat, R., Cox, N. and Ting, C., J. Electroc. Soc., 134, 2829 (1987).Google Scholar
9. Riley, P.E. and Shelley, A., J.Electroc. Soc., 135, 1207 (1988)Google Scholar
10 Woo, M.P., Cain, J.L. and Lee, C., J. Electroc. Soc., 137 196 (1990).Google Scholar