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Characterization of ZnS Layers Grown by MOCVD for Thin Film Electroluminescence (TFEL) Devices

Published online by Cambridge University Press:  25 February 2011

J. E. Yu ,
K. S. Jones ,
J. Fang ,
P. H. Holloway ,
B. Pathangey ,
E. Bretschneider  and
T. J. Anderson
J. E. Yu
Affiliation:
Department of Materials Science & Engineering, University of Florida, Gainesville, FL 32611
K. S. Jones
Affiliation:
Department of Materials Science & Engineering, University of Florida, Gainesville, FL 32611
J. Fang
Affiliation:
Department of Materials Science & Engineering, University of Florida, Gainesville, FL 32611
P. H. Holloway
Affiliation:
Department of Materials Science & Engineering, University of Florida, Gainesville, FL 32611
B. Pathangey
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
E. Bretschneider
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
T. J. Anderson
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
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Abstract

We have characterized MOCVD grown ZnS layers for thin film electroluminescence (TFEL) devices. Films with thicknesses ranged from several Å to 2 μm were studied by x-ray diffractometry (XRD), cross-sectional transmission electron microscopy (XTEM), high-resolution transmission electron microscopy (HRTEM), and ultraviolet-visible photospectrometry (UVS). From HRTEM micrographs, it was observed that ZnS films consist of a mixture of hexagonal and cubic phases. Correlation of UV absorption spectra with XRD analysis resulted in a method for quantitative determination of the cubic packing fraction of polymorphic ZnS films. The initial ZnS layer (< 1000 Å) deposited on BaTa2O6 had more hexagonal than cubic phase because of denser crystal defects. However, the fraction of cubic phase increased with the film thickness. In addition to film microstructures, the mean grain size, growth rate, film uniformity, and surface roughness of MOCVD grown ZnS thin films as functions of film thicknesses and substrate temperatures were also calibrated by XTEM results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 215
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Mach, R. and Muller, G. O., phys. stat. sol. (a) 69, 11 (1982)CrossRefGoogle Scholar
2. Tanninen, V. -P., Oikkonen, M., and Tuomi, T., Thin Solid Films 109, 283 (1983)CrossRefGoogle Scholar
3. Dean, P. J., phys. stat. sol. (a) 81, 625 (1984)Google Scholar
4. Ushakov, V. V. and Gippius, A. A., J. Crystal Growth 101, 458 (1990)Google Scholar
5. Research report of SPIRE Co., FR-60174, 1990 Google Scholar
6. Venghaus, H., Theis, D., Oppolzer, H., and Schild, S., J. Appl. Phys. 53(6), 4146 (1982)Google Scholar
7. Theis, D., Oppolzer, H., Ebbinghaus, G., and Schild, S., J. Crystal Growth 63, 47 (1983)Google Scholar
8. Buch, T., phys. stat. sol. (b) 150, 191 (1988)Google Scholar
9. Smith, F. G., American Mineralogist 40, 658 (1955)Google Scholar
10. Lide, D. R. ed., Handbook of Chemical and Physics, 71st ed. (CRC press, Boston 1990), p. E110 Google Scholar
11. Hirabayashi, K. and Koqure, O., Jpn. J. Appl. Phys. 24(11), 1484 (1985)Google Scholar
12. Shibata, T., Hirabayashi, K., Kozawaquchi, H., and Tsjiyama, B., Jpn. J. Appl. Phys. 26(10), L1664 (1987)Google Scholar
13. Matsuoka, T., Kuwata, J., Nishikawa, M., Fujita, Y., Tohda, T., and Abe, A., Jpn. J. Appl. Phys. 22(4), 592 (1988)Google Scholar
14. Takata, S., Minami, T., Miyata, T., and Nanto, H., J. Crystal Growth 86, 257(1988)Google Scholar
15. Evansjr, H. T., and McKnight, E. T., American Mineralogist 44, 1210 (1959)Google Scholar
16. Coene, W., Bender, H., Lovey, F. C., van Dyck, D., and Amelinckx, S., phys. stat. sol. (a) 87, 483 (1985)Google Scholar
17. Lahtinen, J. A. and Tuomi, T., J. de Physique C10, 239 (1983)Google Scholar
18. Cardona, M. and Harbeke, G., Phys. Rev. 137, 1467 (1965)Google Scholar
19. Baars, J. W. in Proc, of the Intern. Conf. on II-VI Semiconducting Compounds, Providence (1967), pp. 631 Google Scholar
20. Hirabayashi, K. and Kozawaguchi, H., Jpn. J. Appl. Phys. 28(5), 814 (1989)Google Scholar