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Charge Carrier Absorption in Doped Microcrystalline Silicon Films

Published online by Cambridge University Press:  15 February 2011

M. Heintze ,
E. Lotter ,
C.-D. Abel  and
M. B. Schubert
M. Heintze
Affiliation:
IPE, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
E. Lotter
Affiliation:
Center for Solar Energy and Hydrogen Research Baden-Wuerttemberg, Heβbruehlstraβe 21c, 70569 Stuttgart, Germany
C.-D. Abel
Affiliation:
IPE, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
M. B. Schubert
Affiliation:
IPE, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
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Abstract

The infrared absorption in doped microcrystalline silicon thin films is analyzed by modelling the complex permittivity as the sum of the contributions resulting from interband transitions and from absorption by charge carriers. Their density and the drift mobility within grains is described by free carrier motion according to the Drude theory. However, for a good fit to experimental data a small trapping energy, reflecting the effect of grain boundaries, is included in the model. By comparing results obtained from the analysis of infrared data with conductivity and Hall measurements in films grown in a very high frequency (VHF) plasma and by hot-wire chemical vapor deposition (CVD), we show that infrared transmission measurements provide a simple access to transport parameters in these films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 815
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1.Oda, S., Noda, J., and Matsumura, M. in Amorphous Silicon Technology, ed. by Madan, A., Thompson, M.J., Taylor, P.C., LeComber, P.G., and Hamakawa, Y., (Mater. Res. Soc. Symp. Proc. 118, Pittsburgh PA 1988) p. 117Google Scholar
2.Middya, A.R., Guillet, J., Perrin, J., Lloret, A., and Bourée, J.E., Proc. 13th European Photovoltaic Solar Energy Conference (1995), ed. by Freiersleben, W., Palz, W., Ossenbrink, H.A., and Helm, P., (H.S. Stephens & Ass., Bedford UK) p. 1704Google Scholar
3.Usui, S. and Kiguchi, M., J. Non-Cryst. Sol., 34, 1 (1979)Google Scholar
4.Mishima, Y., Hirose, M., and Osaka, Y., J. Appl. Phys. 51, 1157 (1980)Google Scholar
5.Finger, F., Prasad, K., Dubail, S., Shah, A., Tang, X.-M., Weber, J., and Beyer, W. in Amorphous Silicon Technology - 1991 edited by Madan, A., Hamakawa, Y., Thompson, M.J., Taylor, P.C. and LeComber, P.G. (Mat. Res. Soc. Symp. Proc. 219, Pittsburgh, PA 1991), p. 383Google Scholar
6.Peter, K., Willeke, G., Prasad, K., Shah, A., and Bucher, E., Phil. Mag. B 69, 197 (1994)Google Scholar
7.Heintze, M. and Schmitt, M. in Amorphous Silicon Technology - 1996, ed. by Hack, M., Schiff, E.A., Wagner, S., Matsuda, A., and Schropp, R. (Mat. Res. Soc. Symp. Proc 420, Pittsburgh PA), to be publishedGoogle Scholar
8.Wanka, H.N., Zedlitz, R., Heintze, M., and Schubert, M.B. in Proc. 13th European Photovoltaic Solar Energy Conference, ed. by Freiesleben, W., Palz, W., Ossenbrink, H.A., and Helm, P., (H.S. Stephens and Ass., UK 1995), p. 1753Google Scholar
9.Swanepoel, R., J. Phys. E: Sci. Instrum. 16, 1214 (1983)Google Scholar
10.Heintze, M., Abel, C.-D., Lotter, E., and Schubert, M.B., to be published.Google Scholar
11.Willeke, G., in Amorphous and Microcrystalline Semiconductor Devices, Vol. II edited by Kanicki, J. (Artech House, Boston 1992) p. 55Google Scholar
12. “Semiconductors” by Smith, R.A., (Cambridge at the University Press, 1959)Google Scholar
13.Stutzmann, M., Biegelsen, D.K., and Street, R.A., Phys. Rev. B 35, 5666 (1987)Google Scholar
14.Pierz, K., Fuhs, W., and Mell, H., Phil. Mag. B 63, 133 (1991)Google Scholar
15.Heintze, M. and Zedlitz, R., J. Non-Cryst. Sol. 164–166, 55 (1993)Google Scholar
16.Curtins, H. and Vepřek, S., Sol. State Commun., 57, 215 (1986)Google Scholar
17.Komuna, M., Curtins, H., Sarott, F. -A., and Vepřek, A., Phil. Mag. B 55, 377 (1987)Google Scholar