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Chemical Beam Deposition of Y2O3 Thin Films with An Ecr

Published online by Cambridge University Press:  25 February 2011

Maurice Massimo ,
Walter Varhue ,
Edward Adams  and
Stephen Titcomb
Maurice Massimo
Affiliation:
Sinmonds Precision, Vergennes VT
Walter Varhue
Affiliation:
Dept. of Electrical Eng., Univ. of Vermont, Burlington, VT 05405
Edward Adams
Affiliation:
IBM Corp., Essex Junct., VT.
Stephen Titcomb
Affiliation:
Dept. of Electrical Eng., Univ. of Vermont, Burlington, VT 05405
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Abstract

Stoichiometric thin films of Y2O3 have been deposited on Si at substrate temperatures as low as 300 °C by plasma enhanced chemical vapor deposition using an electron cyclotron resonance (ECR) source. The yttrium source was an organo-metallic compound which was sublimated and fed with He carrier gas into the reactor chamber. Good capacitance-voltage characteristic curves were obtained for the dielectric film and a relative electrical permittivity of 9.9 was measured. This technique is a useful means of depositing oxide ceramic films at low substrate temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 249: Symposium Q – Synthesis and Processing of Ceramics: Scientific Issues , 1991 , 233
Copyright
Copyright © Materials Research Society 1992

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References

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