Hostname: page-component-848d4c4894-ttngx Total loading time: 0 Render date: 2024-05-21T02:55:43.928Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemical Beam Epitaxy (CBE) and Laser-Enhanced CBE of GaAs Using Tris-Dimethylaminoarsenic

Published online by Cambridge University Press:  22 February 2011

H. K. Dong ,
N. Y. Li ,
C. W. Tu ,
M. Geva  and
W. C. Mitchel
H. K. Dong
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407
N. Y. Li
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407
C. W. Tu
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407
M. Geva
Affiliation:
AT&T Bell Laboratories, Breinigsville, Pennsylvania 18031-9359
W. C. Mitchel
Affiliation:
Air Force Wright Laboratory, Wright-Patterson AFB, Ohio 45433-6543
Get access

Abstract

In this paper, we report chemical beam epitaxy (CBE) of GaAs, and for the first time, Arion laser-assisted CBE using triethylgallium (TEGa) and tris-dimethylaminoarsenic (TDMAAs), a safer alternative to arsine. Samples grown at substrate temperatures above 490° C show n-type conduction, while those grown at lower temperatures show p-type conduction. An unintentional doping concentration of n∼lx1016 cm-3 with an electron mobility of 5200 cm2/V.s at 300 K and 16000 cm2/V.s at 77 K have been achieved. These are the best results reported for GaAs grown with TDMAAs. Laser-assisted CBE of GaAs is studied in the substrate temperature range of 240-550°C. There are two different substrate-temperature regions for laser-enhanced growth, 265 to 340°C and 340 to 440°C, which are believed to be caused by different TEGa decomposition mechanisms. The laser-assisted growth with TDMAAs, compared to AS4 or AsH3, shows a wider range of growth enhancement at low substrate temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 173
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE

1. Abernathy, C.R., Wisk, P. W., Bohling, D. A., and Muhr, G. T., Appl. Phys. Lett. 60, 2421 (1992).Google Scholar
2. Abernathy, C. R., Wisk, P. W., Pearton, S. J., Ren, F., Bohling, D. A., and Muhr, G. T., J. Cryst Growth 124, 64 (1992).Google Scholar
3. Koui, T., Suemune, I., Hamaoka, K., Fujii, K., Kishimoto, A., Honda, Y., and Yamanishi, M., Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, Yokohama, 408 (1991).Google Scholar
4. Fujii, K., Suemune, I., and Yamanishi, M., Appl. Phys. Lett. 61, 2577 (1992).Google Scholar
5. Fujii, K., Suemune, I., Koui, T., and Yamanishi, M., Appl. Phys. Lett. 60, 1498 (1992).Google Scholar
6. Zimmermann, G., Protzmann, H., Marschner, T., Zsebök, O., Stolz, W., Göbel, E. O., Gimmnich, P., Lorberth, J., Filz, T., Kurpas, P., and Richter, W., J. Cryst. Growth 129, 37 (1993).Google Scholar
7. Aoyagi, Y., Kanazawa, M., Doi, A., Iwai, S. and Namba, S., J. Appl. Phys. 60, 3131 (1986).Google Scholar
8. Donnelly, V. M., Tu, C. W., Beggy, J. C., McCrary, V. R., Lamont, M. G., Harris, T. D., Baiochi, F. A. and Farrow, R. C., Appl. Phys. Lett. 52, 1065 (1988).Google Scholar
9. Sugiura, H., Yamada, T. and Iga, R., Jpn. J. Appl. Phys. 29, L1 (1990).Google Scholar
10. Dong, H. K., Liang, B. W., Ho, M. C., Hung, S. and Tu, C. W., J. Cryst. Growth 124, 181 (1992).Google Scholar
11. Hill, D. E., J. Appl. Phys. 41, 1815 (1970).Google Scholar
12. Hilsum, C., Electron Lett. 10, 259 (1974).Google Scholar
13. Stillman, G. E. and Wolfe, C. M., Thin Solid Films 31, 69 (1976).Google Scholar
14. Sugiura, H., Iga, R., and Yamada, T., J. Cryst. Growth 120, 389 (1992).Google Scholar
15. Yamada, T., Iga, R. and Sugiura, H., Jpn. J. Appl. Phys. 28, L1883 (1989).Google Scholar
16. Robertson, R. Jr, Chiu, T. H., Tsang, W. T., and Cunningham, J. E., J. Appl. Phys. 64, 877 (1988).Google Scholar
17. Liang, B. W. and Tu, C. W., Appl. Phys. Lett. 57, 689 (1990).Google Scholar
18. Martin, T., and Whitehouse, C. R., J. Cryst. Growth 105, 57 (1990).Google Scholar