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Chemical Reaction Pathways for the Deposition of Amorphous Silicon-Hydrogen Alloys by Remote Plasma Enhanced CVD

Published online by Cambridge University Press:  25 February 2011

Gn Parsons ,
Dv Tsu  and
G Lucovsky
Gn Parsons
Affiliation:
Department of Physics, NC State Univ, Raleigh, NC 27695-8202
Dv Tsu
Affiliation:
Department of Physics, NC State Univ, Raleigh, NC 27695-8202
G Lucovsky
Affiliation:
Department of Physics, NC State Univ, Raleigh, NC 27695-8202
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Abstract

We have grown thin films of a-Si:H alloys by Remote Plasma Enhanced CVD (Remote PECVD) and have studied the deposition process by mass spectrometry. We find that the concentration of silane fragments (SiHx x=0 to 3) and higher silanes (e.g. disilane Si2H6) in the gas phase is below our detection limit of =0.5%. Bias experiments and a comparison of the a-Si:H deposition rate with the known concentration of silane in the gas phase suggest that in Remote PECVD, silane molecules, SiH4*, vibrationally excited in the gas phase or on the deposition surface may lead dirtectly to a-Si:H film deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 263
Copyright
Copyright © Materials Research Society 1989

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References

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