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Chemical Routes to Improved Mechanical Properties of PECVD Low K Thin Films

Published online by Cambridge University Press:  17 March 2011

S.M. Bilodeau ,
A.S. Borovik ,
A.A. Ebbing ,
D.J Vestyck ,
C. Xu ,
J.F. Roeder  and
T.H. Baum
S.M. Bilodeau
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810. Email:, sbilodeau@atmi.com
A.S. Borovik
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810
A.A. Ebbing
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810
D.J Vestyck
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810
C. Xu
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810
J.F. Roeder
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810
T.H. Baum
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810
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Abstract

Increasing the elastic modulus and hardness of low K films is one of the key challenges towards integration of these materials into future integrated circuits. Several approaches are explored for increasing the hardness of carbon doped oxide (CDO) dielectrics. Several low K precursors and their mixtures specifically chosen to enhance the hardness (H) and modulus (E) of CDO films through chemically induced cross-linking. Composition and FTIR measurements suggest the presence of C-C and C-Si cross-linking with concurrent observation of improved film hardness and modulus at relatively low deposition temperatures. Films deposited at 373°C using diethoxy-methyl-oxiranyl have a hardness and modulus of 2.5 GPa and 18.1 GPa respectively. Films deposited at 180°C using tetramethylcyclotetrasiloxane (TMCTS) and 25% hardener have hardness and modulus of 1.5 GPa and 9.4 GPa, respectively. These film properties are significantly higher than those observed for TMCTS alone under similar deposition conditions. Based on these results a low temperature process with 25% hardener and 75% TMCTS combined with a porogen was used to produce a porous film with a k<2.5 and a hardness of 0.72GPa.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F6.18
Copyright
Copyright © Materials Research Society 2004

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References

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