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Comparison of the Microstructure of AlN Films Grown by MOCVD and by PLD on Sapphire Substrates

Published online by Cambridge University Press:  10 February 2011

Yun-Xin Li ,
Lourdes Salamanca-Riba ,
V. Talyan ,
T. Venkatesan ,
C. Wongchigul ,
P. Zhou ,
X. Tang  and
M. G. Spencer
Yun-Xin Li
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742
Lourdes Salamanca-Riba
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742
V. Talyan
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742
T. Venkatesan
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742
C. Wongchigul
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington, DC 20059
P. Zhou
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington, DC 20059
X. Tang
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington, DC 20059
M. G. Spencer
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington, DC 20059
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Abstract

(0001) aluminium nitride thin films were grown epitaxially on (0001) Sapphire substrates by MOCVD at 1200° C and PLD at 800° C. Both films have the same epitaxial growth relationship: (0001)AlN//(0001)Sap, and the same in-plane relationship which shows a 30° rotation between A1N and Sapphire: [ 12 10]AlN//[0 110]Sap and [10 10]AlN //[ 2110]Sap. The full width at half maximum (FWHM) of x-ray rocking curve of the MOCVD A1N film was 0.16° and PLD A1N film was 0.2°. Films grown by both MOCVD and PLD showed high crystalline quality. HRTEM images showed that these films are single crystalline with very low density of defects.

Dislocations in the film parallel to the film / substrate interface were observed in both A1N films. Atomic force microscopy images showed that the MOCVD films have flatter and larger terraces than the PLD films. The PLD technique for A1N growth needs to be improved further. But both films have a surface roughness of approximately 100nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 453
Copyright
Copyright © Materials Research Society 1997

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References

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