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Components for AlGaN/GaN Power Amplifiers

Published online by Cambridge University Press:  21 March 2011

B. Jacobs ,
P. Wingelaar ,
M. Kramer ,
S. Falcone ,
F. Karouta ,
P. De Hek ,
E. Suijker  and
R. Van Dijk
B. Jacobs
Affiliation:
Eindhoven University of Technology, Department of Electrical Engineering, Opto-electronic devices group, PO box 513, NL-5600 MB, Eindhoven, The Netherlands
P. Wingelaar
Affiliation:
Eindhoven University of Technology, Department of Electrical Engineering, Opto-electronic devices group, PO box 513, NL-5600 MB, Eindhoven, The Netherlands
M. Kramer
Affiliation:
Eindhoven University of Technology, Department of Electrical Engineering, Opto-electronic devices group, PO box 513, NL-5600 MB, Eindhoven, The Netherlands
S. Falcone
Affiliation:
Eindhoven University of Technology, Department of Electrical Engineering, Opto-electronic devices group, PO box 513, NL-5600 MB, Eindhoven, The Netherlands
F. Karouta
Affiliation:
Eindhoven University of Technology, Department of Electrical Engineering, Opto-electronic devices group, PO box 513, NL-5600 MB, Eindhoven, The Netherlands
P. De Hek
Affiliation:
TNO Physics and Electronics Laboratory, 2509 JG, The Hague, The Netherlands
E. Suijker
Affiliation:
TNO Physics and Electronics Laboratory, 2509 JG, The Hague, The Netherlands
R. Van Dijk
Affiliation:
TNO Physics and Electronics Laboratory, 2509 JG, The Hague, The Netherlands
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Abstract

Ohmic contacts and Schottky contacts were made on an undoped AlGaN/GaN FET structure. Despite the high Al content (33%), we were still able to obtain a contact resistance of 0.3 ωmm. Pulsed measurements showed the large effect of self-heating even for circular contacts with a radius of 50 μm. The behavior ofthe Ni/Au Schottky contacts is according to the charge control model; the reverse current and capacitanceonly scale with the area of the diode. Tests with polygon type diodes showed no dependence of the reverse current on the number of polygon corners. The reverse current decreased when the devices were aged at 400°C for 30 hrs. Coplanar Waveguide discontinuities were realized on AlN substrates. A scalable lumped element model was derived from measurements for T-junctions, transmission lines, bends and crosses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E10.4
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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