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Computer Modelling of the Temperature Distribution in the Silicon Single Crystals During Growth and the Thermal History of the Crystal

Published online by Cambridge University Press:  28 February 2011

O. J. Anttila ,
M. V. Tilli  and
V. K. Lindroos
O. J. Anttila
Affiliation:
Helsinki University of Technology, Laboratory of Physical Metallurgy, SF-02150 Espoo, Finland
M. V. Tilli
Affiliation:
Okmetic Ltd., PB 44, SF-02631 Espoo, Finland
V. K. Lindroos
Affiliation:
Helsinki University of Technology, Laboratory of Physical Metallurgy, SF-02150 Espoo, Finland
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Abstract

Computer modelling of the silicon single crystal grown by the Czochralski method has been carried out in order to calculate the temperature isotherms as well as to evaluate the thermal history of the crystal. The aim of the present work is to find out to which extent the thermal history of the crystal can be altered without structural modifications of the single crystal furnace. Furthermore, another aim is to study the influence of external heaters, reflectors and cooling elements to the temperature isotherms as well as to the form of the solid-melt interface. The model developed so far takes into account the crystal diameter and the pull rate as well as the radiation from the heater, the crucible and the melt. Furthermore, the inclusive study of the cooling effect of the inert gas flow is under progress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 323
Copyright
Copyright © Materials Research Society 1986

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References

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