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Computer Simulation of the Metal Organic Chemical Vapor Deposition of CdTe

Published online by Cambridge University Press:  28 February 2011

S. Kang ,
T.J. Jasinski ,
G.S. Tompa  and
R.A. Stall
S. Kang
Affiliation:
Creare Inc., Etna Rd., Box 71, Hanover NH 03755
T.J. Jasinski
Affiliation:
Creare Inc., Etna Rd., Box 71, Hanover NH 03755
G.S. Tompa
Affiliation:
EMCORE Corp., 35 Elizabeth Ave., Somerset, NJ 08873
R.A. Stall
Affiliation:
EMCORE Corp., 35 Elizabeth Ave., Somerset, NJ 08873
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Abstract

The optimization of chemical vapor deposition processes requires an understanding of the influence of various process parameters on the deposition of thin films. A recently developed computer simulation tool provides a powerful means to develop this understanding. This paper describes the use of the computer program, FLUENT, to study the gas flow, temperature, and chemical species distributions during the deposition of CdTe. Numerical results are reported for two operating conditions for an EMCORE vertical high-speed rotating disk growth reactor and are compared to experimental data. The influence of process parameters is discussed. The effects of the addition of significant amounts of Hg (several percent) to the process gas is evaluated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 421
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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