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Contribution of Gas-Phase Reactions to the Deposition of SiC by A Forced-Flow Chemical Vapor Infiltration Process

Published online by Cambridge University Press:  15 February 2011

Ching-Yi Tsai  and
Seshu B. Desu
Ching-Yi Tsai
Affiliation:
Department of Engineering Science and Mechanics Virginia Polytechnic Institute and State University, Blacksburg, VA, 24061
Seshu B. Desu
Affiliation:
Department of Materials Engineering Virginia Polytechnic Institute and State University, Blacksburg, VA, 24061
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Abstract

A model, incorporating both gas-phase and surface reactions, for simulating thickness profile of SiC, deposited from trichloromethylsilane (TMS), along the longitudinal direction of a single pore is presented in this paper. The transport mechanisms considered include both forced-flow and diffusion. With the nonlinear nature of this model, a finite element model was developed to solve the problem numerically. Simulation results were in good agreement with the reported experimental data by Fedou et al. (1990). Effects of critical parameters, such as deposition temperature, ratio of sticking coefficients of TMS and intermediate species, and forced-flow, on the deposition thickness profile were investigated. Forced-flow effect was found to be small for the chemical vapor infiltration (CVI) processes at high deposition temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 250: Symposium R – Chemical Vapor Deposition of Refractory Metals and Ceramics II , 1991 , 227
Copyright
Copyright © Materials Research Society 1992

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References

1. Caputo, A.J., Lackey, W.J. and Stinton, D.P., Ceram. Eng. Sci. Proc., 6, 694 (1985).Google Scholar
2. Nyan-Hwa, Tai and Chou, Tsu-Wei, J. Am. Ceram. Soc., 72, 414 (1989).Google Scholar
3. Gupte, S.M. and Tsamopoulos, J.A., J. Electrochem. Soc., 136 555, (1989).CrossRefGoogle Scholar
4. Stanley, Middleman, J. Mater. Res., 4, 1515 (1989).Google Scholar
5. Fedou, R., Langlais, F. and Naslain, R., Proc. of the 11th Inter. Confer. on Chemical Vapor Deposition, 513 (1990).Google Scholar
6. Currier, R.P., J. Am. Ceram. Soc., 73, 2274 (1990).CrossRefGoogle Scholar
7. Starr, T.L., Ceram. Eng. Sci. Proc., 8, 951 (1987).Google Scholar
8. Gupte, S.M. and Tsamopoulos, J.A., J. Electrochem. Soc., 137, 1626 (1989).CrossRefGoogle Scholar
9. Gupte, S.M. and Tsamopoulos, J.A., J. Electrochem. Soc., 137, 3675 (1990).Google Scholar
10. Tai, Nyan-Hwa and Chou, Tsu-Wei, J. Am. Ceram. Soc. 73, 1489 (1990).Google Scholar
11. Brian, W. Sheldon, J. Mater. Res., 5, 2729 (1990).Google Scholar
12. Kazunori, Watanabe and Hiroshi, Komiyama, J. Electrochem. Soc. 137, 1222 (1990).Google Scholar
13. Surya, R. Kalidindi and Seshu, B. Desu, J. Electrochem. Soc., 137, 624 (1990).Google Scholar
14. Bird, R.B., Steward, W.E., and Lightfoot, E.N., Transport Phenomena, (John Wiley & Sons, New York, 1960).Google Scholar
15 Reddy, J.N., An Introduction to the Finite Element Method, (McGraw-Hill, New York, 1984)Google Scholar