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Control of Chemical Reactions for Growth of Crystalline Si at Low Substrate Temperature

Published online by Cambridge University Press:  21 February 2011

Isamu Shimizu ,
Jun-Ichi Hanna  and
Hajime Shirai
Isamu Shimizu
Affiliation:
The Graduate School, Imaging Sci. & Eng. Lab., Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Japan
Jun-Ichi Hanna
Affiliation:
Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Japan
Hajime Shirai
Affiliation:
The Graduate School, Imaging Sci. & Eng. Lab., Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Japan
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Abstract

A systematic study has been made on the formation of Si-network of amorphous(a-), microcrystalline(μc-) and epitaxial (epi)-Si prepared by Plasma-Enhaced (PE-) CVD under control of flow of atomic hydrogen. The control of the Si-network structures requires a deliberate selection of the precursor, i.e., SiHn (n≤53) and SiFnHm (n+m≤53), as well as an intentional acceleration of the chemical reactions for the propagation of Si-network in the vicinity of the growing surface by impinging of atomic hydrogen. A plausible interpretation was given to the growing mechanism of c-Si at low temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 195
Copyright
Copyright © Materials Research Society 1990

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