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Correlation Between the Standard Deviation of Sheet Resistance and the Temperature of Rapid Thermal Annealing

Published online by Cambridge University Press:  10 February 2011

X. W. Lin  and
D. Pramanik
X. W. Lin
Affiliation:
VLSI Technology Inc., 1109 McKay Drive, San Jose, CA. 95131
D. Pramanik
Affiliation:
VLSI Technology Inc., 1109 McKay Drive, San Jose, CA. 95131
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Abstract

Rapid thermal annealing (RTA) induced reactions between Ti thin films and Si wafers were characterized by sheet resistance measurements. It was found that the standard deviation a of the measurements is RTA-temperature dependent, and strongly correlates with the mean sheet resistance R. A specific temperature was identified, corresponding to a sharp σ peak in the temperature regime associated with the C49-C54 TiSi2 phase transition. This temperature is characteristic of materials parameters such as Ti thickness and substrate doping species, and can be used to accurately monitor or compare the calibration of RTA systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 429: Symposium N – Rapid Thermal and Integrated Processing V , 1996 , 181
Copyright
Copyright © Materials Research Society 1996

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