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Correlation of Dislocation Loop Formation and Time Dependent Diffusion of Implanted P-type Dopants in Gallium Arsenide

Published online by Cambridge University Press:  26 February 2011

H. G. Robinson ,
M. D. Deal ,
D. A. Stevenson  and
K. S. Jones
H. G. Robinson
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
M. D. Deal
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305
D. A. Stevenson
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
K. S. Jones
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
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Abstract

Recent experimental results indicate that diffusion of implanted p-type dopants in GaAs is time dependent under certain conditions. For Mg implanted at a dose of 1 × 1014 cm−2, the diffusion is constant for approximately an hour, then decreases by an order of magnitude or more. Be implanted at 1 × 1013 and 1 ×1014 cm−2 exhibits similar behavior, but with a shorter time before the diffusivity decreases. The diffusivity in 1 × 1013 Mg cm−2 implants, in contrast, remains constant for up to 16 hours. TEM micrographs of Be and Mg implants reveal dislocation loops in the higher dose samples, but not in the lower dose ones. During annealing, the loops grow and decrease in density, eventually disappearing completely from the crystal. This annealing of the loops appears to correlate to the time dependence of the diffusion. This behavior can be explained in terms of the substitutional-interstitial diffusion (SID) mechanism and point defect equilibria.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 715
Copyright
Copyright © Materials Research Society 1992

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References

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