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Crystalline and Electrical Properties of Ferroelectric Silver Niobate-tantalate thin Films

Published online by Cambridge University Press:  21 March 2011

Jung-Hyuk Koh ,
S.I. Khartsev ,
Alex Grishin  and
Vladimir Petrovsky
Jung-Hyuk Koh
Affiliation:
Condensed Matter Physics, Department of Physics, Royal Institute of Technology, Stockholm, S-100 44, Sweden
S.I. Khartsev
Affiliation:
Condensed Matter Physics, Department of Physics, Royal Institute of Technology, Stockholm, S-100 44, Sweden
Alex Grishin
Affiliation:
Condensed Matter Physics, Department of Physics, Royal Institute of Technology, Stockholm, S-100 44, Sweden
Vladimir Petrovsky
Affiliation:
Department of Ceramic Engineering, University Missouri-Rolla, EMARC, Rolla, MO
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Abstract

For the first time AgTa0.38Nb0.62O3 (ATN) films have been grown on the La0.7Sr0.3CoO3 (LSCO)/LaAlO3 single crystal as well as onto Pt80Ir20 (PtIr) polycrystalline substrate. Comprehensive X-ray diffraction analyses reveal epitaxial quality of ATN and LSCO films on the LaAlO3(001) substrate, while ATN/PtIr films have been found to be (001) preferentially oriented. Dielectric spectroscopy performed for ATN films and bulk ceramics in a wide temperature range 77 to 420 K shows the structural monoclinic M1-to-monoclinic M2 phase transition occurs in films at the temperature 60 °C lower than in ceramics. The tracing of the ferroelectric hysteresis P-E loops indicates the ferroelectric state in ATN films at temperatures below 125 K and yields remnant polarization of 0.4 μC/cm2 @ 77 K. Weak frequency dispersion, high temperature stability of dielectric properties as well as low processing temperature of 550 °C make ATN films to be attractive for various applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC11.5.1
Copyright
Copyright © Materials Research Society 2001

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References

1. Feng, H.H., Chen, C.L., Appl. Phys. Lett. 75, 412 (1999).Google Scholar
2. Li, H.C., Si, W., West, A.D., Xi, X.X., Appl. Phys. Lett. 73, 190 (1998).Google Scholar
3. Hoeman, B.H., Ford, G.M., Appl.Phys.Lett. 73, 2248 (1998).Google Scholar
4. Volkov, A.A., Gorshunov, B.P., Komandin, G., Fortin, W., Kugel, G.E., and Grigas, J., J. Phys.: Condens. Matter 7, 785 (1995).Google Scholar
5. Kania, A., Phase Transitions, 3, 131 (1983).Google Scholar