Hostname: page-component-848d4c4894-x5gtn Total loading time: 0 Render date: 2024-06-08T02:42:16.237Z Has data issue: false hasContentIssue false
  • English
  • Français

Crystallization of Amorphous Thin BST/MgO(001) Films Grown by R.F. Magnetron Sputtering

Published online by Cambridge University Press:  10 February 2011

D. Y. Noh ,
H. H. Lee ,
J. H. Je  and
H. K. Kim
D. Y. Noh
Affiliation:
Department of Materials Science and Engineering, and Center for Electronic Materials Research, Kwangju Institute of Science and Technology (K-JIST), Kwangju 506-712, KOREAdynoh@matla.kjist.ac.kr
H. H. Lee
Affiliation:
Department of Materials Science and Engineering, and Center for Electronic Materials Research, Kwangju Institute of Science and Technology (K-JIST), Kwangju 506-712, KOREAdynoh@matla.kjist.ac.kr
J. H. Je
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea
H. K. Kim
Affiliation:
Department of Physics, Pusan National University, Pusan 609-735, Korea
Get access

Abstract

The crystallization of amorphous BST thin films was studied in a synchrotron x-ray scattering experiment. At around 600°C, an intermediate phase, which was suspected to be a metastable pyrochlore phase, was formed. The x-ray reflectivity curves showed that the film-substrate interface became rough as the pyrochlore-like phase was formed. This suggests that the pyrochlore phase was nucleated near the interface area. Upon further annealing to higher temperatures, the film transformed to the crystalline perovskite phase. The crystallization was sensitive to the film thickness. In the thin 550Å thick film, the crystallization occurred at 750 °C with the <001> preferred orientation. On the other hand, the 5500Å thick film became crystalline even at 500°C with random crystalline orientation. The observed thickness dependence of the crystallization suggests that the crystalline perovskite phase was nucleated in the bulk of the film, rather than the near interface area.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 359
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Arita, K., Fujii, E., Shimada, Y., Uemoto, Y., Nasu, T., Inoue, A., Matsuda, A., Otsuki, T., and Suzuoka, N., Jpn. J. Appl. Phys. 33, 5397 (1994)Google Scholar
2. Chu, C.M. and Lin, P., Appl. Phys. Lett., 70 (2), 249 (1997)Google Scholar
3. Yoon, S. and Safari, A., J. Appl. Phys., 76 (5), 2999 (1994)Google Scholar
4. Chern, C.S., Liang, S., Shi, Z. Q., Shi, , Yoon, S., Safari, A., Lu, P., Kear, B. H.. Goodreau, B. H., Marks, T. J., and Hou, S. Y., Appl. Phys. Lett. 64 (23), 3181 (1994)Google Scholar
5. Soyama, N., Sasaki, G., Atsuki, T., Yonezawa, T., and Ogi, K.. Jpn. J. Phys. 33, 5268 (1994)Google Scholar
6. Paek, S., Won, J., Lee, K., Choi, J., and Park, C., Jpn. J. Appl. Phys. 35, 5757 (1996)Google Scholar
7. Bhattacharya, P., Park, K., and Nishioka, Y., Jpn. J. Appl. Phys. 33, 5231 (1994)Google Scholar
8. Ichinose, N. and Ogiwara, T., Jpn. J. Appl. Phys. 34, 5198 (1995)Google Scholar
9. Warren, B. E., X-ray Diffraction, (Dover Publications, Inc., New York, 1990) p. 253 Google Scholar
10. Shinha, K., Sanyal, M. K., Satija, S. K., Majkzak, C. F., Neumann, D. A., Homma, H., Szpala, S., Gibaud, A., and Morkoc, H., Physica B 198, 77 (1994)Google Scholar